Staff

M. Sc. Albert-Marcel Schrotz

Contact

About Albert-Marcel Schrotz

Areas of Interest

  • RF Chipdesign (up to 320 GHz)
  • RF System Engineering

Open thesis projetcs

Just call me!

Publications

2020

  • S. Breun, M. Völkel, A. Schrotz, M. Dietz, V. Issakov, and R. Weigel, "A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT" in RWW 2020, 2020 (to be published). [Bibtex]
    @inproceedings{breun2020a,
    abstract = {This paper presents a low-power wideband push-push voltage controlled oscillator (VCO), achieving a frequency tuning-range (FTR) of 19 GHz (14 %) at a center frequency of 136 GHz. The VCO yields a minimum phase noise of −86.5 dBc/Hz at 1 MHz offset at a power consumption of around 27 mW from a 1.8 V supply, which yields a FOMT of −178 dBc/Hz. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ft/fmax of 250 GHz/370 GHz, respectively, and is integrated with a by-32 divider chain attached to the fundamental output of the VCO, offering a 2.1 GHz output for an external phaselocked loop (PLL).
    }, author = {Breun, Sascha and Völkel, Matthias and Schrotz, Albert-Marcel and Dietz, Marco and Issakov, Vadim and Weigel, Robert}, language = {English}, booktitle = {RWW 2020}, cris = {https://cris.fau.de/converis/publicweb/publication/227024522}, year = {2020}, month = {01}, day = {26}, eventdate = {2020-01-26/2020-01-29}, faupublication = {yes}, note = {unpublished}, peerreviewed = {automatic}, title = {A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT}, }

2019

  • A. Schrotz, T. Maiwald, K. Kolb, S. Breun, M. Dietz, A. Hagelauer, and R. Weigel, "Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance" in APMC (Asia-Pacific Microwave Conference), Singapur, Singapore, 2019 (to be published). [Bibtex]
    @inproceedings{schrotz2019,
    abstract = {In this paper, a design methodology for automated Marchand balun design is shown. The goal of this methodology is a balun providing the lowest insertion loss at the smallest phase imbalance. The design process is realized by using the EM simulator Sonnet, Matlab and the Matlab-Sonnet interface. The implemented algorithm is using a simulation-based characterization of the semiconductor process and a mathematical model of the balun. For this characterization an even and odd mode analysis is carried out. Hence, the electrical and dielectric properties, such as the characteristic impedance and the effective permittivity, are determined. This enables a precise "first guess simulation" of the balun, minimizing the required number of optimization iterations. As an example, a D-band Marchand balun is presented here, that was designed with this methodology. The measurement results show a phase imbalance less than 7° over the entire D-band and an insertion loss smaller than 1.75 dB. To the best of the author's knowledge, there was no software tool that enables automated development for Marchand baluns yet, although it is widely used.
    }, author = {Schrotz, Albert-Marcel and Maiwald, Tim and Kolb, Katharina and Breun, Sascha and Dietz, Marco and Hagelauer, Amelie and Weigel, Robert}, language = {English}, booktitle = {APMC (Asia-Pacific Microwave Conference)}, cris = {https://cris.fau.de/converis/publicweb/publication/224804429}, year = {2019}, month = {12}, day = {10}, eventdate = {2019-12-10}, faupublication = {yes}, keywords = {Marchand Balun; Automatically balun Design}, note = {unpublished}, peerreviewed = {automatic}, title = {Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance}, venue = {Singapur, Singapore}, }
  • M. Völkel, A. Schrotz, R. Weigel, and A. Hagelauer, "A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology" in IEEE Radio and Wireless Symposium, Orlando, Florida, USA, 2019. [Bibtex]
    @inproceedings{voelkel2019a,
    abstract = {In this paper a 60 GHz monolithic transmitter for
    high precision based industrial radar systems is presented. The
    integrated transmitter has been designed using a 0.13μm SiGe
    BiCMOS process from IHP (SG13G2) and includes multiplier,
    multiplexer, power amplifier and a digital interface. For testing,
    a PCB interface adapter is developed to control and supply the
    chip directly on the wafer prober. The integrated transmitter
    circuit has a size of 1800μm x 1600μm and a maximum power
    consumption of 148.5mW from a 3.3V power supply. The circuit
    provides four frequency inputs and multiplies them up to 60 GHz.
    The chip delivers a output power of 8dBm at 60GHz and min.
    5dBm over a frequency range from 55 to 65 GHz. The input
    path is switched and the output power is adjustable by a digital
    interface between -20 and 8dBm at 60 GHz. This serial interface
    is realized in 0.13μm CMOS logic and consists of a 15 bit shift
    register, decoder and and analog interface.
    }, author = {Völkel, Matthias and Schrotz, Albert-Marcel and Weigel, Robert and Hagelauer, Amelie}, language = {English}, booktitle = {IEEE Radio and Wireless Symposium}, cris = {https://cris.fau.de/converis/publicweb/publication/205597252}, year = {2019}, month = {01}, day = {22}, eventdate = {2019-01-20/2018-10-23}, faupublication = {yes}, keywords = {industrial radar,transmitter,millimeter wave circuits,SiGe BiCMOS}, peerreviewed = {unknown}, title = {A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Orlando, Florida, USA}, }

COPYRIGHT NOTICE: Copyright and all rights of the material above are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by the appropriate copyright. The material may not be reposted without the explicit permission of the copyright holder.

COPYRIGHT NOTICE FOR IEEE PUBLICATIONS: © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

COPYRIGHT NOTICE FOR EUMA PUBLICATIONS: © EUMA. Personal use of this material is permitted. Permission from European Microwave Association(EUMA) must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.