Mitarbeiter

Dr.-Ing. Amelie Hagelauer (Akad. Rätin)

Kontakt

  • E-Mail:
  • Telefon: 09131/85-27191
  • Fax: Neu:09131/85-28730
  • Raum: 02.288
  • Neu: Wetterkreuz 15
    91058 Erlangen

Über Amelie Hagelauer

Lebenslauf

Amelie Hagelauer received the Dipl.-Ing. degree in mechatronics and the Dr.-Ing. degree in electrical engineering from the Friedrich-Alexander-University Erlangen-Nuremberg, Germany in 2007 and 2013, respectively. She joined the Institute for Electronics Engineering in November 2007, where she was working on thin film BAW filters towards her PhD. Since 2013 she is focusing on SAW/BAW and RF MEMS components, as well as integrated circuits for frontends up to 180 GHz. Dr. Hagelauer has been the Chair of MTT-2 Microwave Acoustics since 2015. Since 2016 she is leading a Research Group on Electronic Circuits. She is continuously contributing to the development of RF Acoustics community by organizing workshops and student design competitions. She has been acting as a Guest Editor for a special issue of the IEEE MTT Transactions on the topic “RF Frontends for Mobile Radio” as well as for a special issue in the MDPI Journal Sensors on the topic “Surface Acoustic Wave and Bulk Acoustic Wave Sensors”.

Arbeitsgebiete

  • BAW- und SAW-Komponenten
  • HF-MEMS
  • Gehäusetechnologien

Abschlussarbeiten

Bitte melden, falls Interesse an einem der genannten Arbeitsgebiete besteht.

Weitere Aufgaben

Gewählte Frauenbeauftragte (Department Elektrotechnik-Elektronik-Informationstechnik): Weitere Informationen finden Sie hier.

Lehrveranstaltungen Sommersemester 2018

Lehrveranstaltungen Wintersemester 2018

Preise & Auszeichnungen

  • V. Chauhan, K. Wagner, M. Mayer, W. Ruile, A. Mayer, R. Weigel, and A. Hagelauer, IEEE IUS 2017 Student Paper Competition Award, IEEE Ultrasonics, Ferroelectrics and Frequency Control Society, 2017. [Bibtex]
    @prize{chauhan_prize_2017,
    abstract = {Best student paper award in the field of Microacoustics SAW, FBAR, MEMS for year 2017},
    author = {Chauhan, Vikrant and Wagner, Karl and Mayer, Markus and Ruile, Werner and Mayer, Andreas and Weigel, Robert and Hagelauer, Amelie},
    booktitle = {IEEE Ultrasonics, Ferroelectrics and Frequency Control Society},
    cris = {chauhan_prize_2017},
    year = {2017},
    month = {09},
    day = {08},
    title = {IEEE IUS 2017 Student Paper Competition Award},
    type = {20773-Kleiner Preis},
    }

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Publikationen

2019

  • J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology" in Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF), Orlando, FL, USA, 2019 (to be published). [Bibtex]
    @inproceedings{rimmelspacher2019,
    abstract = {This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is −94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm2.
    }, author = {Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim}, language = {English}, booktitle = {Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF)}, cris = {https://cris.fau.de/converis/publicweb/publication/203768203}, year = {2019}, month = {04}, day = {20}, eventdate = {2019-01-20/2019-01-23}, faupublication = {yes}, keywords = {millimeter-wave VCO,wideband,silicon-on-insulator,CMOS technology,System-on-Chip}, note = {unpublished}, peerreviewed = {unknown}, title = {LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology}, type = {Konferenzschrift}, venue = {Orlando, FL, USA}, }
  • D. Schuklin, J. Röber, M. Stadelmayer, T. Mai, R. Weigel, and A. Hagelauer, "Highly Integrated Low Power Photomultiplier Readout ASIC Comprising Fast ADC to Be Used in the Antarctic Ice" in 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, Florida, USA, 2019. [Bibtex]
    @inproceedings{schuklin2019,
    abstract = {After the successful launch of IceCube, the work is currently concentrated the next generation neutrino observatory at South Pole, IceCube Gen2. The neutrino detection and post processing accuracy mostly relies on used electronic hardware. The proposed highly integrated, low power photomultiplier readout ASIC is designed for function in low temperatures of Antarctic. The microchip comprises an input pre-amplifier, a clock generator and an ADC with encoder logic featuring sampling rate of 500MHz, 6bit output accuracy with a smart extension of input related resolution up to 8bit in the area of interest. It achieves the same accuracy like a standard 8bit ADC architecture but with significantly less hardware overhead and power dissipation.
    }, author = {Schuklin, Dennis and Röber, Jürgen and Stadelmayer, Markus and Mai, Timo and Weigel, Robert and Hagelauer, Amelie}, language = {English}, booktitle = {2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)}, cris = {https://cris.fau.de/converis/publicweb/publication/208580332}, year = {2019}, month = {02}, day = {20}, eventdate = {2019-01-20/2019-01-23}, faupublication = {yes}, peerreviewed = {unknown}, title = {Highly Integrated Low Power Photomultiplier Readout ASIC Comprising Fast ADC to Be Used in the Antarctic Ice}, type = {Konferenzschrift}, venue = {Orlando, Florida, USA}, }
  • R. Ciocoveanu, R. Weigel, A. Hagelauer, and V. Issakov, "A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS" in IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Orlando, FL, USA, 2019 (to be published). [Bibtex]
    @inproceedings{ciocoveanu2019,
    abstract = {This paper presents a 60GHz highly efficient single-stage differential stacked Class AB power amplifier (PA) with second harmonic control. The circuit has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a maximum output power (Pmax) of 15.3dBm with a competitive maximum power-added efficiency (PAEmax) of 30.5% at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a 1.8V supply and the chip core size is 0.36mm x 0.35 mm.},
    author = {Ciocoveanu, Radu and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    language = {English},
    booktitle = {IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/204681005},
    year = {2019},
    month = {01},
    day = {20},
    eventdate = {2019-01-20/2019-01-23},
    faupublication = {yes},
    keywords = {Power Amplifier,High-Power,High-Efficiency,PD-SOI.},
    note = {unpublished},
    peerreviewed = {unknown},
    title = {A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS},
    type = {Konferenzschrift},
    venue = {Orlando, FL, USA},
    }
  • M. Völkel, R. Weigel, and A. Hagelauer, "A Digital Adjustable 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology" in RWW, Orlando, Florida, 2019 (to be published). [Bibtex]
    @inproceedings{voelkel2019,
    abstract = {In this paper, a fully integrated digital adjustable
    sixport receiver front-end working at 60GHz is presented.
    The circuit features two variable gain amplifier, the
    passive sixport network, four detectors and a SPI-interface.
    Application area are industrial radar or angle of arrival
    detection. The phase measurement is done by superposition
    and power detection of two millimeter wave signals. The
    integrated circuit has a power consumption of 88.44mW from
    a 3.3V supply voltage. It is fabricated in a 0.13μm SiGe
    BiCMOS process and has a size of 1560μm x 1000 μm. The
    RF and reference input power can be adjusted in a 21 dB
    range over a 12 bit digital interface. The receiver exhibits
    a 1 dB compression point of -21.9 dB. RF signals down to
    -55dBm are detectable.
    }, author = {Völkel, Matthias and Weigel, Robert and Hagelauer, Amelie}, language = {English}, booktitle = {RWW}, cris = {https://cris.fau.de/converis/publicweb/publication/204214221}, year = {2019}, month = {01}, day = {19}, eventdate = {2019-01-19/2019-01-23}, faupublication = {yes}, keywords = {angle of arrival,industrial radar,interferometer,phase measurement,SiGe BiCMOS,sixport}, note = {unpublished}, peerreviewed = {automatic}, title = {A Digital Adjustable 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Orlando, Florida}, }
  • M. Völkel, A. Schrotz, R. Weigel, and A. Hagelauer, "A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology" in IEEE Radio and Wireless Symposium, Orlando, Florida, USA, 2019 (to be published). [Bibtex]
    @inproceedings{voelkel2019a,
    abstract = {In this paper a 60 GHz monolithic transmitter for
    high precision based industrial radar systems is presented. The
    integrated transmitter has been designed using a 0.13μm SiGe
    BiCMOS process from IHP (SG13G2) and includes multiplier,
    multiplexer, power amplifier and a digital interface. For testing,
    a PCB interface adapter is developed to control and supply the
    chip directly on the wafer prober. The integrated transmitter
    circuit has a size of 1800μm x 1600μm and a maximum power
    consumption of 148.5mW from a 3.3V power supply. The circuit
    provides four frequency inputs and multiplies them up to 60 GHz.
    The chip delivers a output power of 8dBm at 60GHz and min.
    5dBm over a frequency range from 55 to 65 GHz. The input
    path is switched and the output power is adjustable by a digital
    interface between -20 and 8dBm at 60 GHz. This serial interface
    is realized in 0.13μm CMOS logic and consists of a 15 bit shift
    register, decoder and and analog interface.
    }, author = {Völkel, Matthias and Schrotz, Albert-Marcel and Weigel, Robert and Hagelauer, Amelie}, language = {English}, booktitle = {IEEE Radio and Wireless Symposium}, cris = {https://cris.fau.de/converis/publicweb/publication/205597252}, year = {2019}, month = {01}, day = {22}, eventdate = {2019-01-20/2018-10-23}, faupublication = {yes}, keywords = {industrial radar,transmitter,millimeter wave circuits,SiGe BiCMOS}, note = {unpublished}, peerreviewed = {unknown}, title = {A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Orlando, Florida, USA}, }
  • V. Chauhan, M. Mayer, W. Ruile, K. Wagner, R. Weigel, and A. Hagelauer, "A General P-Matrix Model to Calculate the Third Order Nonlinear Physical Constants in Temperature Compensating SAW Devices", iss. IEEE Transactions on Ultrasonics, Ferroelectrics , and Frequency Control, 2019 (to be published). [Bibtex]
    @article{chauhan2019,
    abstract = {A nonlinear P-matrix model is implemented to describe the generation of third harmonic (H3) and third order intermodulation (IMD3) products in temperature compensated surface acoustic wave (TC-SAW) devices on
    Lithium Niobate substrate. The constitutive equations are extended by considering the source terms of mixed acoustic and electric origin, where the nonlinear sources are written as sum of mixed third order terms in strain and electric field. Two nonlinear sources are considered, one is the directly induced nonlinear current at the electrode finger and another is due to acoustic sources distributed in the device, which indirectly lead to a nonlinear current at the electrodes. In total eight source terms and therefore, eight nonlinear coefficients are introduced to extend the P-matrix approach. The third order nonlinear model shows a good fit to different H3 and IMD3 measurements for duplexers operating in the LTE Band-1 frequency range. The nonlinear parameters extracted provide a broad dataset for predicting the nonlinear performance. Finally, the role of electric and acoustic contributions to the nonlinear responses of TC-SAW devices is discussed.
    }, author = {Chauhan, Vikrant and Mayer, Markus and Ruile, Werner and Wagner, Karl and Weigel, Robert and Hagelauer, Amelie}, language = {English}, publisher = {IEEE}, cris = {https://cris.fau.de/converis/publicweb/publication/203912620}, year = {2019}, faupublication = {yes}, note = {unpublished}, number = {IEEE Transactions on Ultrasonics, Ferroelectrics , and Frequency Control}, peerreviewed = {automatic}, title = {A General P-Matrix Model to Calculate the Third Order Nonlinear Physical Constants in Temperature Compensating SAW Devices}, type = {Article in Journal}, }

2018

  • R. Ciocoveanu, R. Weigel, A. Hagelauer, A. Geiselbrechtinger, and V. Issakov, "5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS" in 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS, Kyoto International Conference Center, Kyoto, Japan, Japan, 2018. [Bibtex]
    @inproceedings{ciocoveanu2018c,
    abstract = {This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth generation (5G) K/Ka band front-ends that has been realized in a 45nm PDSOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Psat) of 17.3 dBm with a 39.7% maximum power-added efficiency (PAEmax) at 24 GHz. The output-referred 1-dB compression point (OP1dB) is 14.3dBm and the saturated output power varies from 15.9dBm to 17.3dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40mA from a 2.9V supply and the chip core size is 0.35mm x 0.25 mm.},
    author = {Ciocoveanu, Radu and Weigel, Robert and Hagelauer, Amelie and Geiselbrechtinger, Angelika and Issakov, Vadim},
    language = {English},
    booktitle = {5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS},
    cris = {https://cris.fau.de/converis/publicweb/publication/203983358},
    year = {2018},
    month = {12},
    day = {15},
    eventdate = {2018-11-06/2018-11-09},
    eventtitle = {2018 Asia-Pacific Microwave Conference (APMC 2018)},
    faupublication = {yes},
    keywords = {Stacked PA; 45nm PD-SOI; 5G; High Power; High Efficiency},
    peerreviewed = {unknown},
    title = {5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS},
    type = {Konferenzschrift},
    venue = {Kyoto International Conference Center, Kyoto, Japan, Japan},
    }
  • J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT" in European Solid-State Circuits Conference (ESSCIRC), Dresden, Germany, 2018. [Bibtex]
    @inproceedings{rimmelspacher2018d,
    abstract = {This paper presents a 60 GHz Quad-Core push-push VCO in 45 nm partially depleted Silicon-on-Insulator (SOI) CMOS. The measured phase noise (PN) at 60.5 GHz is −101.7 dB/Hz at 1 MHz offset from carrier. The continuous frequency-tuning range (FTR) is 19 %. The Quad-Core VCO consumes only 40 mW DC power. The complete circuit including fundamental and second harmonic (H2) output buffers draws 110 mA from a single 1 V supply. The VCO cores are coupled via resonant-tank transformers. A similar transformer-coupled Dual-Core VCO is fabricated and measured to prove the relative PN improvement between Dual-Core and Quad-Core topology. The total area of the Quad-Core VCO excluding pads is 0.1 mm2.},
    author = {Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    booktitle = {European Solid-State Circuits Conference (ESSCIRC)},
    cris = {https://cris.fau.de/converis/publicweb/publication/200493727},
    year = {2018},
    month = {12},
    day = {01},
    eventdate = {2018-09-03/2018-09-06},
    faupublication = {yes},
    keywords = {millimeter-wave,wideband,silicon-on-insulator,CMOS technology,System-on-Chip},
    peerreviewed = {unknown},
    title = {A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT},
    type = {Konferenzschrift},
    venue = {Dresden, Germany},
    }
  • R. Ciocoveanu, R. Weigel, A. Hagelauer, and V. Issakov, "A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS" in A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS, San Diego, California, USA, USA, 2018. [Bibtex]
    @inproceedings{ciocoveanu2018b,
    abstract = {This paper presents a wideband digitally tunable SPST switch based on the travelling-wave concept that has been realized in a 22 nm FD-SOI CMOS technology. The digital control for return loss is performed through mutual inductance switching. Small-signal measurement results show that the proposed SPST switch achieves a bandwidth of 10-110 GHz, with an insertion loss of 1.2 dB at 60 GHz and a 24 dB isolation at 60 GHz, whereas large-signal measurements show a 1-dB compression point of +7 dBm at 24 GHz. Furthermore, the 3 digital control bits allow tuning return loss center frequency by approximately 7 GHz. The chip core size is 0.12 mm x 0.15 mm.},
    author = {Ciocoveanu, Radu and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    language = {English},
    booktitle = {A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS},
    cris = {https://cris.fau.de/converis/publicweb/publication/203983033},
    year = {2018},
    month = {11},
    day = {15},
    eventdate = {2018-10-14/2018-10-17},
    eventtitle = {2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS},
    type = {Konferenzschrift},
    venue = {San Diego, California, USA, USA},
    }
  • X. Huang, A. Hagelauer, L. Zhou, M. Völkel, R. Weigel, and J. Mao, "Design of a Novel Quarter-mode Substrate-Integrated Waveguide Filter With Multiple Transmission Zeros and Higher Mode Suppressions", IEEE Transactions on Microwave Theory and Techniques, pp. 1-12, 2018. [DOI] [Bibtex]
    @article{huang2018,
    author = {Huang, Xiao-Long and Hagelauer, Amelie and Zhou, Liang and Völkel, Matthias and Weigel, Robert and Mao, Jun-Fa},
    cris = {https://cris.fau.de/converis/publicweb/publication/207576313},
    year = {2018},
    month = {11},
    day = {20},
    doi = {10.1109/TMTT.2018.2879087},
    faupublication = {yes},
    issn = {0018-9480},
    journaltitle = {IEEE Transactions on Microwave Theory and Techniques},
    pages = {1--12},
    peerreviewed = {Yes},
    shortjournal = {IEEE T MICROW THEORY},
    title = {Design of a Novel Quarter-mode Substrate-Integrated Waveguide Filter With Multiple Transmission Zeros and Higher Mode Suppressions},
    type = {Article in Journal},
    }
  • M. Völkel, K. Borutta, M. Dietz, K. Aufinger, R. Weigel, and A. Hagelauer, "A 110-135 GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology" in Asia-Pacific Microwave Conference, Koyoto, 2018, pp. 1-3. [Bibtex]
    @inproceedings{voelkel2018,
    abstract = {In this paper, a fully monolithic low-power sixport
    receiver front-end working from 110 to 135GHz including an
    oscillator with divider stages, a passive sixport network and four
    detectors is presented. The measurement principle is based on
    an additive superposition of two incident millimeter-wave signals.
    The receiver circuit blocks are described and the measurement
    results are presented. All components have been designed using
    a 0.13μm 250GHz fT SiGe BiCMOS technology. The whole
    integrated circuit has a size of 1960μm x 1500μm including
    bondpads and consumes 100mA from a 3.3V and 82mA from
    a 1.8V supply. The receiver exhibits a 1 dB compression point
    of -1.3dBm at the center frequency of 121.5 GHz. The VCO
    has a tuning range of 27 GHz, with a best case phase noise
    of -110 dBc/Hz at 1MHz offset measured at the divider output
    for PLL stabilization. The maximum oscillator output power is
    -0.4 dBm.
    }, author = {Völkel, Matthias and Borutta, Karl and Dietz, Marco and Aufinger, Klaus and Weigel, Robert and Hagelauer, Amelie}, editor = {Völkel, Matthias}, language = {English}, booktitle = {Asia-Pacific Microwave Conference}, cris = {https://cris.fau.de/converis/publicweb/publication/202227788}, year = {2018}, month = {11}, day = {09}, eventdate = {2018-11-06/2018-11-09}, faupublication = {yes}, keywords = {industrial radar,communication receiver,interferometer,phase measurement,sixport,low power,SiGe BiCMOS,millimeter-wave.}, pages = {1--3}, peerreviewed = {unknown}, title = {A 110-135 GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Koyoto}, }
  • V. Chauhan, M. Mayer, W. Ruile, K. Wagner, A. Mayer, R. Weigel, and A. Hagelauer, "A nonlinear FEM model to calculate third harmonics and intermodulation in TC-SAW devices" in IEEE International Ultrasonics Symposium, Kobe, Japan, 2018, pp. 1-4. [Bibtex]
    @inproceedings{chauhan2018c,
    author = {Chauhan, Vikrant and Mayer, Markus and Ruile, Werner and Wagner, Karl and Mayer, Andreas and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/200125873},
    year = {2018},
    month = {10},
    day = {21},
    eventdate = {2018-10-21/2018-10-26},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {A nonlinear FEM model to calculate third harmonics and intermodulation in TC-SAW devices},
    type = {Journal Article},
    venue = {Kobe, Japan},
    }
  • V. Chauhan, M. Mayer, W. Ruile, K. Wagner, R. Weigel, and A. Hagelauer, "P-matrix model for third order electric and acoustic nonlinearities in TC-SAW devices" in IEEE International Ultrasonics Symposium, Kobe, Japan, 2018. [Bibtex]
    @inproceedings{chauhan2018d,
    author = {Chauhan, Vikrant and Mayer, Markus and Ruile, Werner and Wagner, Karl and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/200126234},
    year = {2018},
    month = {10},
    day = {21},
    eventdate = {2018-10-21/2018-10-26},
    eventtitle = {IEEE International Ultrasonics Symposium},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {P-matrix model for third order electric and acoustic nonlinearities in TC-SAW devices},
    type = {Journal Article},
    venue = {Kobe, Japan},
    }
  • A. Hagelauer, G. Fattinger, C. Ruppel, M. Ueda, K. Hashimoto, and A. Tag, "Microwave Acoustic Wave Devices: Recent Advances on Architectures, Modeling, Materials, and Packaging", IEEE Transactions on Microwave Theory and Techniques, vol. 66, iss. 10, pp. 4548-4562, 2018. [DOI] [Bibtex]
    @article{hagelauer2018b,
    author = {Hagelauer, Amelie and Fattinger, Gernot and Ruppel, Clemens and Ueda, Masanori and Hashimoto, Ken-ya and Tag, Andreas},
    language = {English},
    cris = {https://cris.fau.de/converis/publicweb/publication/200639703},
    year = {2018},
    month = {10},
    day = {05},
    doi = {10.1109/TMTT.2018.2854160},
    faupublication = {yes},
    issn = {0018-9480},
    journaltitle = {IEEE Transactions on Microwave Theory and Techniques},
    number = {10},
    pages = {4548--4562},
    peerreviewed = {Yes},
    shortjournal = {IEEE T MICROW THEORY},
    title = {Microwave Acoustic Wave Devices: Recent Advances on Architectures, Modeling, Materials, and Packaging},
    type = {Review article},
    volume = {66},
    }
  • W. Akstaller, J. Kuypers, K. Kokkonen, R. Weigel, and A. Hagelauer, "Electrothermal modeling of TC SAW filter" in IEEE International Ultrasonics Symposium, Kobe, Japan, 2018. [Bibtex]
    @inproceedings{akstaller2018,
    author = {Akstaller, Wolfgang and Kuypers, Jan and Kokkonen, Kimmo and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/202248853},
    year = {2018},
    month = {10},
    day = {22},
    eventdate = {2018-10-22/2018-10-25},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {Electrothermal modeling of TC SAW filter},
    type = {Journal Article},
    venue = {Kobe, Japan},
    }
  • T. Mai, A. Hagelauer, and R. Weigel, "Maximizing Temperature and Process Corner Performance of Operational Amplifiers with a Novel Self-Adjusting Biasing Technique" in Austrian Workshop on Microelectronics, Graz University of Technology, 2018, p. 4. [Bibtex]
    @inproceedings{mai2018,
    abstract = {A novel self-adjusting biasing technique for current sources in CMOS operational 

    amplifiers is presented.
    The method is deduced from the fundamental characteristics of a mosfet and a simple line of reasoning.
    Opamps using this technique can produce a more constant gain over process corners 
    and temperature. This is especially important under
    large-signal conditions, when the output 
    is near one of the supply rails or a large current needs to be driven. 
    Therefore it reduces worst case distortion in a given Opamp circuit that uses feedback
    over temperature and process corners.
    It is also capable of driving low-$V_t$-devices that typically exhibit less noise, increasing
    the achievable noise performance of the Opamp almost without additional current consumption.
    The method was implemented and simulated in tsmc 180 nm CMOS. 
    Simulation results are presented that clearly show the increased performance compared 
    to the state of the art.
    }, author = {Mai, Timo and Hagelauer, Amelie and Weigel, Robert}, language = {English}, booktitle = {Austrian Workshop on Microelectronics}, cris = {https://cris.fau.de/converis/publicweb/publication/208516281}, year = {2018}, month = {09}, day = {27}, eventdate = {2018-09-27/2018-09-27}, faupublication = {yes}, keywords = {operational amplifier; gain boosting; adaptive biasing; monticelli; process variations}, pages = {4}, peerreviewed = {unknown}, title = {Maximizing Temperature and Process Corner Performance of Operational Amplifiers with a Novel Self-Adjusting Biasing Technique}, type = {Konferenzschrift}, venue = {Graz University of Technology}, }
  • J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "60 GHz Tail-Node-Coupled Multi-Core Push-Push VCOs in 22 nm FD SOI CMOS Technology" in European Microwave Conference 2018, Madrid, Spain, 2018. [Bibtex]
    @inproceedings{rimmelspacher2018c,
    abstract = {This paper proposes a compact realization of a phase-noise (PN) improving core-coupling technique for millimetre-wave (mm-Wave) CMOS LC voltage-controlled oscillators (VCOs). The target is to provide a multi-core wideband continuous frequency-tuning-range (FTR) and low PN for FMCW radar applications while maintaining area and complexity at a minimum level. The VCO cores are superharmonic injection-locked at second harmonic (H2) on a common tail node. Three VCOs are fabricated in a 22 nm fully depleted (FD) silicon-on-insulator (SOI) CMOS technology: Single-Core, Dual-Core and Quad-Core. All implementations have the same core design. Measurements show the expected PN improvement for the multi-core VCOs compared to the single-core VCO.},
    author = {Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    booktitle = {European Microwave Conference 2018},
    cris = {https://cris.fau.de/converis/publicweb/publication/111630244},
    year = {2018},
    month = {09},
    day = {25},
    eventdate = {2018-09-25/2018-09-27},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {60 GHz Tail-Node-Coupled Multi-Core Push-Push VCOs in 22 nm FD SOI CMOS Technology},
    venue = {Madrid, Spain},
    }
  • V. Chauhan, L. W. Wandji, X. Peng, V. Silva Cortes, U. Stehr, A. Frank, R. Weigel, and A. Hagelauer, "Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate" in IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes, Michigan, USA, 2018. [DOI] [Bibtex]
    @inproceedings{chauhan2018b,
    author = {Chauhan, Vikrant and Wandji, Lionel Wilfried and Peng, Xuejiao and Silva Cortes, Victor and Stehr, Uwe and Frank, Astrid and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes},
    cris = {https://cris.fau.de/converis/publicweb/publication/200126598},
    year = {2018},
    month = {09},
    day = {10},
    doi = {10.1109/IMWS-AMP.2018.8457140},
    eventdate = {2018-07-16/2018-04-18},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate},
    type = {Konferenzschrift},
    url = {https://ieeexplore.ieee.org/document/8457140/},
    venue = {Michigan, USA},
    }
  • R. Ciocoveanu, R. Weigel, A. Hagelauer, and V. Issakov, "Bias-switched Down-Conversion Mixer for Flicker Noise Reduction in 28-nm CMOS" in Texas Symposium on Wireless and Microwave Circuits and Systems, Waco, Texas, USA, 2018. [Bibtex]
    @inproceedings{ciocoveanu2018a,
    abstract = {This paper presents a modified Gilbert-cell mixer employing a novel biasing-scheme used to reduce the high Noise Figure, due to inherently high 1/f noise of MOS transistors. Switching the transistor from strong inversion to accumulation interferes with the self-correlation of the physical noisy process, which leads to a reduction in flicker noise. To illustrate this improvement, a comparison with a conventionally biased mixer is carried. Post-layout simulation results show that this mixer achieves a voltage conversion gain of 2.2 dB, a 1 dB compression point of 3 dBm and a 5 dB reduction in noise figure at 50 kHz, while it draws a current of 13 mA from a single 0.9 V supply. The occupied chip area is 0.5x0.94 mm². According to author’s knowledge this is the first time that bias switching technique is applied to a mixer at mm-wave frequencies.},
    author = {Ciocoveanu, Radu and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    language = {English},
    booktitle = {Texas Symposium on Wireless and Microwave Circuits and Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/200465469},
    year = {2018},
    month = {07},
    day = {01},
    eventdate = {2018-04-05/2018-04-06},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {Bias-switched Down-Conversion Mixer for Flicker Noise Reduction in 28-nm CMOS},
    type = {Konferenzschrift},
    venue = {Waco, Texas, USA},
    }
  • J. Rimmelspacher, A. Hagelauer, R. Weigel, and V. Issakov, "A 60 GHz Push-Push Voltage-Controlled Oscillator with Adaptive Gate Biasing in 28 nm Bulk CMOS Technology" in International Microwave Symposium 2018, Philadelphia, Pennsylvania, USA, 2018. [Bibtex]
    @inproceedings{rimmelspacher2018a,
    author = {Rimmelspacher, Johannes and Hagelauer, Amelie and Weigel, Robert and Issakov, Vadim},
    booktitle = {International Microwave Symposium 2018},
    cris = {https://cris.fau.de/converis/publicweb/publication/119625704},
    year = {2018},
    month = {06},
    day = {10},
    eventdate = {2018-06-10/2018-06-15},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {A 60 GHz Push-Push Voltage-Controlled Oscillator with Adaptive Gate Biasing in 28 nm Bulk CMOS Technology},
    type = {Konferenzschrift},
    venue = {Philadelphia, Pennsylvania, USA},
    }
  • V. Chauhan, M. Mayer, W. Ruile, K. Wagner, A. Mayer, R. Weigel, and A. Hagelauer, "Investigation on Third-Order Intermodulation Distortions due to Material Nonlinearities in TC-SAW Devices", IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 2018. [DOI] [Bibtex]
    @article{chauhan2018a,
    author = {Chauhan, Vikrant and Mayer, Markus and Ruile, Werner and Wagner, Karl and Mayer, Andreas and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    cris = {https://cris.fau.de/converis/publicweb/publication/111585144},
    year = {2018},
    month = {05},
    day = {02},
    doi = {10.1109/TUFFC.2018.2832283},
    faupublication = {yes},
    issn = {0885-3010},
    journaltitle = {IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control},
    peerreviewed = {Yes},
    shortjournal = {IEEE T ULTRASON FERR},
    title = {Investigation on Third-Order Intermodulation Distortions due to Material Nonlinearities in TC-SAW Devices},
    type = {Article in Journal},
    url = {https://ieeexplore.ieee.org/document/8353434/},
    }
  • V. Silva Cortes, U. Stehr, J. Stegner, J. Nowak, M. Hein, R. Sommer, G. Fischer, and A. Hagelauer, "Multiphysical Design Methodology for the Heterogeneous Integration of an RF Receiver" in German Microwave Conference, Freiburg, Germany, 2018. [DOI] [Bibtex]
    @inproceedings{silva2018,
    author = {Silva Cortes, Victor and Stehr, Uwe and Stegner, Johannes and Nowak, Jacek and Hein, Matthias and Sommer, Ralf and Fischer, Georg and Hagelauer, Amelie},
    language = {English},
    booktitle = {German Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/119629004},
    year = {2018},
    month = {03},
    day = {12},
    doi = {10.23919/GEMIC.2018.8335030},
    eventdate = {2018-03-12/2018-03-14},
    eventtitle = {German Microwave Conference 2018},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {Multiphysical Design Methodology for the Heterogeneous Integration of an RF Receiver},
    type = {Article in Journal},
    url = {https://ieeexplore.ieee.org/document/8335030/},
    venue = {Freiburg, Germany},
    }
  • A. Hagelauer, W. Akstaller, C. Musolff, and R. Weigel, "X-Parameter Characterization of SAW and BAW Components - a Review" in Seventh International Symposium on Acoustic Wave Devices for Future Mobile Communication Systems, Chiba, Japan, 2018. [Bibtex]
    @inproceedings{hagelauer2018a,
    abstract = {
    This paper surveys X-Parameter based characterization
    of surface acoustic wave (SAW) and bulk acoustic wave
    (BAW) components. Due to the increased integration of frontend
    modules in mobile devices, the power density in BAW and SAW
    components rises continuously. Furthermore, the demand for
    more frequency bands is required by advanced communication
    techniques. As a result, the probability of significant nonlinear
    emissions disturbing adjacent channels increases. Thus, the
    linearity of individual frontend components becomes more and
    more important. In order to comply with spectral emission masks
    and limitations on spurious emissions imposed by standards
    and specifications, accurate modeling of the device’s response
    is required. In this paper, two measurement setups which
    are based on a nonlinear vector network analyzer (NVNA) are
    utilized in order to characterize BAW and SAW filters. A high
    dynamic range is required because of the low power levels of the
    generated higher order harmonics. Two different measurement
    setup approaches are compared to each other. The application
    of frequency selective attenuators enables an increase of the
    dynamic range by more than 40 dB.
    }, author = {Hagelauer, Amelie and Akstaller, Wolfgang and Musolff, Christian and Weigel, Robert}, language = {English}, booktitle = {Seventh International Symposium on Acoustic Wave Devices for Future Mobile Communication Systems}, cris = {https://cris.fau.de/converis/publicweb/publication/111006104}, year = {2018}, month = {03}, day = {07}, eventdate = {2018-03-06/2018-03-07}, faupublication = {yes}, peerreviewed = {No}, title = {X-Parameter Characterization of SAW and BAW Components - a Review}, type = {Konferenzschrift}, venue = {Chiba, Japan}, }
  • V. Chauhan, Y. Liang, Y. Liao, V. Silva, R. Weigel, and A. Hagelauer, "Application of X-parameters in studying nonlinearities in BAW and SAW Filters" in German Microwave Conference, Freiburg, Germany, 2018, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{chauhan2018,
    author = {Chauhan, Vikrant and Liang, Yunshi and Liao, Yucheng and Silva, Victor and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {German Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/110994444},
    year = {2018},
    month = {03},
    day = {12},
    doi = {10.23919/GEMIC.2018.8335034},
    eventdate = {2018-03-12/2018-03-14},
    eventtitle = {German Microwave Conference},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {unknown},
    title = {Application of X-parameters in studying nonlinearities in BAW and SAW Filters},
    type = {Konferenzschrift},
    url = {https://ieeexplore.ieee.org/document/8335034/},
    venue = {Freiburg, Germany},
    }
  • F. Trenz, R. Weigel, and A. Hagelauer, "Methods for Human Dehydration Measurement", Frequenz, vol. 72, iss. 3-4, pp. 159-166, 2018. [DOI] [Bibtex]
    @article{trenz2018,
    abstract = {The aim of this article is to give a broad overview of current methods for the identification and quantific- ation of the human dehydration level. Starting off from most common clinical setups, including vital parameters and general patients’ appearance, more quantifiable res- ults from chemical laboratory and electromagnetic meas- urement methods will be reviewed. Different analysis methods throughout the electromagnetic spectrum, ran- ging from direct current (DC) conductivity measurements up to neutron activation analysis (NAA), are discussed on the base of published results. Finally, promising techno- logies, which allow for an integration of a dehydration assessment system in a compact and portable way, will be spotted.},
    author = {Trenz, Florian and Weigel, Robert and Hagelauer, Amelie},
    cris = {https://cris.fau.de/converis/publicweb/publication/106922024},
    year = {2018},
    month = {03},
    day = {07},
    doi = {10.1515/FREQ-2018-0006},
    faupublication = {yes},
    issn = {0016-1136},
    journaltitle = {Frequenz},
    keywords = {hydration,dehydration,physiology,measurement,total body water,body composition},
    number = {3-4},
    pages = {159--166},
    peerreviewed = {Yes},
    shortjournal = {FREQUENZ},
    title = {Methods for Human Dehydration Measurement},
    type = {Review article},
    volume = {72},
    }
  • A. Frank, V. Silva Cortes, S. Michael, A. Hagelauer, and G. Fischer, "Thermal Modeling and Measurement of a Power Amplifier Module for a Silicon-Ceramic Substrate" in German Microwave Conference, Freiburg, Germany, 2018. [DOI] [Bibtex]
    @inproceedings{frank2018a,
    author = {Frank, Astrid and Silva Cortes, Victor and Michael, Steffen and Hagelauer, Amelie and Fischer, Georg},
    booktitle = {German Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/119629224},
    year = {2018},
    month = {03},
    day = {12},
    doi = {10.23919/GEMIC.2018.8335033},
    eventdate = {2018-03-12/2018-03-14},
    eventtitle = {German Microwave Conference 2018},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {Thermal Modeling and Measurement of a Power Amplifier Module for a Silicon-Ceramic Substrate},
    type = {Article in Journal},
    url = {https://ieeexplore.ieee.org/document/8335033/},
    venue = {Freiburg, Germany},
    }
  • C. Söll, M. Reichenbach, J. Röber, A. Hagelauer, R. Weigel, and D. Fey, "Case Study on Memristor-Based Multilevel Memories", International Journal of Circuit Theory and Applications, vol. 46, iss. 1, pp. 99-112, 2018. [DOI] [Bibtex]
    @article{soell2017,
    abstract = {In this work, the benefits of memristor-based multilevel memories are described along with their design problems. Starting with measurements of discrete actual devices, a discrete memristor based multilevel memory is developed. It uses a printed circuit board in order to connect eight packaged memristors from Bio Inspired to test a ternary Arithmetic Logic Unit (ALU) on a field programmable gate array (FPGA). These circuits are then integrated in the second proposed memory system based on a 150nm CMOS process that can be equipped with memristors on top of the metal layers. This integrated solution includes proper read-out, erase and write circuits to control real memristors, and 32x32 memristive memory cells. It is compared to a common static random-access memory (SRAM) in terms of area, computation speed and power consumption showing benefits for memory sizes bigger than 70 words. Since yield and device variations are still a big issue in memristor fabrication, methods to counter these problems are also proposed in the end. An actual implementation should offer several trimming solutions to ensure proper functionality of a prototype memory as well as a power-on calibration, until these problems are solved. The development of the presented memories is not only based on different models but also measurements done with real devices.},
    author = {Söll, Christopher and Reichenbach, Marc and Röber, Jürgen and Hagelauer, Amelie and Weigel, Robert and Fey, Dietmar},
    publisher = {Wiley Online Library},
    cris = {https://cris.fau.de/converis/publicweb/publication/108239824},
    year = {2018},
    month = {01},
    doi = {10.1002/CTA.2379},
    faupublication = {yes},
    issn = {0098-9886},
    journaltitle = {International Journal of Circuit Theory and Applications},
    keywords = {Memristor; Multi-Level Memory; Memory Interface; Memristive Computing; GRK-1773},
    number = {1},
    pages = {99--112},
    peerreviewed = {Yes},
    shortjournal = {INT J CIRC THEOR APP},
    title = {Case Study on Memristor-Based Multilevel Memories},
    type = {Article in Journal},
    volume = {46},
    }
  • V. Silva Cortes, L. Liu, U. Stehr, M. Fischer, A. Frank, V. Chauhan, M. Hein, J. Müller, R. Weigel, G. Fischer, and A. Hagelauer, "Design of a Power Amplifier Module in a Novel Silicon-Ceramic Substrate for an LTE Transmitter" in Asia Pacific Microwave Conference, Kuala Lumpar, Malaysia, 2018, pp. 448-451. [DOI] [Bibtex]
    @inproceedings{silva2017,
    abstract = {The present paper demonstrates the design of a power amplifier (PA) module on a silicon ceramic (SiCer) composite substrate. The SiCer platform combines the advantages of low temperature co-fired ceramic (LTCC) and silicon thin-film processing technology for micro-electro-mechanical systems (MEMS) in a quasi-monolithic composite substrate. The present approach provides a methodology for the design and manufacturing of a PA module that foresees further integration with MEMS modules such as switches, oscillators, and acoustic filters. Based on a co-simulation approach in a specification-compliant software and polyharmonic distortion modeling, the impact of the PA module in a long term evolution (LTE) transmitter is evaluated.},
    author = {Silva Cortes, Victor and Liu, Lian and Stehr, Uwe and Fischer, Michael and Frank, Astrid and Chauhan, Vikrant and Hein, Matthias and Müller, Jens and Weigel, Robert and Fischer, Georg and Hagelauer, Amelie},
    language = {English},
    booktitle = {Asia Pacific Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/123513984},
    year = {2018},
    month = {01},
    day = {11},
    doi = {10.1109/APMC.2017.8251477},
    eventdate = {2017-11-13/2017-11-16},
    eventtitle = {Asia Pacific Microwave Conference},
    faupublication = {yes},
    isbn = {9781538606407},
    keywords = {Power amplifier; front end; composite substrate},
    pages = {448--451},
    peerreviewed = {Yes},
    title = {Design of a Power Amplifier Module in a Novel Silicon-Ceramic Substrate for an LTE Transmitter},
    type = {Journal Article},
    url = {http://ieeexplore.ieee.org/document/8251477/},
    venue = {Kuala Lumpar, Malaysia},
    }
  • E. Aguilar Mendoza, A. Hagelauer, D. Kissinger, and R. Weigel, "A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications" in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Anaheim, California, USA, 2018, pp. 27-29. [DOI] [Bibtex]
    @inproceedings{aguilar2018,
    abstract = {A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain>20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author’s knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.},
    author = {Aguilar Mendoza, Erick and Hagelauer, Amelie and Kissinger, Dietmar and Weigel, Robert},
    language = {English},
    booktitle = {Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/120458624},
    year = {2018},
    month = {01},
    day = {14},
    doi = {10.1109/SIRF.2018.8304220},
    eventdate = {2018-01-14/2018-01-17},
    faupublication = {yes},
    keywords = {D-Band; Imaging; Radiometrie; LNA,SiGe,mm-wave},
    pages = {27--29},
    peerreviewed = {unknown},
    title = {A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications},
    type = {Konferenzschrift},
    venue = {Anaheim, California, USA},
    }
  • J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "30 % Frequency-Tuning-Range 60 GHz Push-Push VCO in 28 nm Bulk CMOS Technology" in Radio & Wireless Week 2018, Anaheim, California, USA, USA, 2018. [DOI] [Bibtex]
    @inproceedings{rimmelspacher2018,
    abstract = {This paper presents a 60 GHz push-push crosscoupled voltage-controlled oscillator (VCO) in 28 nm bulk CMOS technology. It achieves a continuous frequency tuning range (FTR) of 30% from 52 to 71 GHz in a single sweep. We propose coupling the fundamental harmonic from the VCO core by means of magnetic coupling via a transformer-based resonant tank. This is used instead of directly connecting the output buffers to the oscillation node. The VCO provides a phase noise in the range of -93 to -82 dBc/Hz at 1 MHz offset from carrier across the entire FTR. The measured DC power dissipation including buffers at the fundamental and second harmonic outputs does not exceed 68 mW. The circuit operates from a single supply of 0.9 V. The circuit area excluding pads is 0.15 mm2. Thanks to the achieved very wide continuous FTR, the presented VCO is suitable for FMCW radar applications that require a very fine range resolution.},
    author = {Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    language = {English},
    booktitle = {Radio & Wireless Week 2018},
    cris = {https://cris.fau.de/converis/publicweb/publication/107729864},
    year = {2018},
    month = {01},
    day = {14},
    doi = {10.1109/SIRF.2018.8304221},
    eventdate = {2018-01-14/2018-01-18},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {30 % Frequency-Tuning-Range 60 GHz Push-Push VCO in 28 nm Bulk CMOS Technology},
    venue = {Anaheim, California, USA, USA},
    }
  • M. Dietz, M. Striegel, R. Weigel, and A. Hagelauer, "A New Heat-Warning-System Based on a Wireless Body Area Network for Protecting Firefighters in Indoor Operations" in IEEE Topical Conference on Wireless Sensors and Sensor Networks, Anaheim, CA, USA, 2018, pp. 34-37. [DOI] [Bibtex]
    @inproceedings{dietz2018,
    abstract = {A new Heat-Warning-System is presented to
    protect firefighters in indoor operations. With the proposed
    Heat-Warning-System, a permanent monitoring of the body
    core temperature can be done, in order to protect the
    firefighter from a collapse. Furthermore, by placing several
    temperature sensors around the thorax on particular positions,
    the relative location of dangerous heat sources can
    be estimated. For the placement of the sensor nodes, an
    empirical channel model in combination with a cuboid body
    model was used, to estimate the individual transmission path
    losses by taking into account the influence of the human body.
    Finally, the Heat-Warning-System is tested and moreover the
    locating functionality of dangerous heat sources is shown.}, author = {Dietz, Marco and Striegel, Martin and Weigel, Robert and Hagelauer, Amelie}, language = {English}, booktitle = {IEEE Topical Conference on Wireless Sensors and Sensor Networks}, cris = {https://cris.fau.de/converis/publicweb/publication/119597544}, year = {2018}, month = {01}, day = {14}, doi = {10.1109/WISNET.2018.8311557}, eventdate = {2018-01-14/2018-01-17}, faupublication = {yes}, pages = {34--37}, peerreviewed = {unknown}, title = {A New Heat-Warning-System Based on a Wireless Body Area Network for Protecting Firefighters in Indoor Operations}, type = {Konferenzschrift}, venue = {Anaheim, CA, USA}, }
  • R. Ciocoveanu, J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS" in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Anaheim, USA, 2018, pp. 19-22. [DOI] [Bibtex]
    @inproceedings{ciocoveanu2018,
    abstract = {
    This paper presents a high linearity modified Gilbert-cell mixer designed for 60-GHz applications and fabricated in a 28-nm CMOS technology. To increase the linearity of the mixer, the RF transconductance stage was removed, thereby reducing the amount of stacked transistors. We propose using a self-biasing Vth reference in the bias network to make the mixer more robust to process-voltagetemperature (PVT) variations. Measurement results show that this mixer achieves a voltage conversion gain of 4.7 dB, a 1-dB compression point of -3 dBm and a 12.3 dB noise figure, while it draws only 2 mA from a single 0.9 V supply. The occupied area on the chip is 0.35x0.68 mm2 including pads.
    }, author = {Ciocoveanu, Radu and Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim}, language = {English}, booktitle = {Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems}, cris = {https://cris.fau.de/converis/publicweb/publication/111716704}, year = {2018}, month = {01}, day = {14}, doi = {10.1109/SIRF.2018.8304218}, eventdate = {2018-01-14/2018-01-17}, faupublication = {yes}, keywords = {Down-Conversion Mixer,High-Linearity,Low-Power,PVT Robust}, pages = {19--22}, peerreviewed = {unknown}, title = {A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS}, type = {Konferenzschrift}, venue = {Anaheim, USA}, }
  • A. Hagelauer, M. Wojnowski, K. Pressel, R. Weigel, and D. Kissinger, "Integrated Systems-in-Package: Heterogeneous Integration of Millimeter-Wave Active Circuits and Passives in Fan-Out Wafer-Level Packaging Technologies", IEEE Microwave Magazine, vol. 19, iss. 1, pp. 48-56, 2018. [DOI] [Bibtex]
    @article{hagelauer2018,
    author = {Hagelauer, Amelie and Wojnowski, Maciej and Pressel, Klaus and Weigel, Robert and Kissinger, Dietmar},
    language = {English},
    cris = {https://cris.fau.de/converis/publicweb/publication/119792464},
    year = {2018},
    month = {01},
    doi = {10.1109/MMM.2017.2759558},
    faupublication = {yes},
    issn = {1527-3342},
    journaltitle = {IEEE Microwave Magazine},
    keywords = {Antenna measurements;Dipole antennas;Integrated circuits;Packaging;Radio frequency;Silicon;Transceivers},
    number = {1},
    pages = {48--56},
    peerreviewed = {Yes},
    shortjournal = {IEEE MICROW MAG},
    title = {Integrated Systems-in-Package: Heterogeneous Integration of Millimeter-Wave Active Circuits and Passives in Fan-Out Wafer-Level Packaging Technologies},
    type = {Review article},
    volume = {19},
    }
  • V. Chauhan, C. Huck, A. Frank, W. Akstaller, R. Weigel, and A. Hagelauer, "Multiphysical Modeling and Performance Enhancement of RF Bulk Acoustic Wave Components", IEEE Microwave Magazine, iss. IEEE Microwave Magazine, 2018 (to be published). [Bibtex]
    @article{chauhan2018e,
    author = {Chauhan, Vikrant and Huck, Christian and Frank, Astrid and Akstaller, Wolfgang and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    cris = {https://cris.fau.de/converis/publicweb/publication/109488104},
    year = {2018},
    faupublication = {yes},
    issn = {1527-3342},
    journaltitle = {IEEE Microwave Magazine},
    note = {unpublished},
    number = {IEEE Microwave Magazine},
    peerreviewed = {automatic},
    shortjournal = {IEEE MICROW MAG},
    title = {Multiphysical Modeling and Performance Enhancement of RF Bulk Acoustic Wave Components},
    type = {Article in Journal},
    }

2017

  • V. Chauhan, R. Weigel, and A. Hagelauer, "Non-linearity in Surface Acoustic Wave devices for wireless communication at 2 GHz frequency From wafer measurements to PCB simulation" in European Microwave Week (EuMW), Worshop on High-Q RF MEMS devices and multiphysical cross-layer circuit design, Nuremberg, Germany, 2017. [Bibtex]
    @inproceedings{chauhan2017a,
    abstract = {The growing complexity in RF front-ends which includes carrier aggregation and growing number of frequency bands leads to the non-linearity in acoustic devices such as Surface Acoustic Wave components (SAW). In this work, 30 different versions of 1-port and 2-port single SAW resonators are created for wafer level and printed circuit board (PCB) measurements. During the fabrication process, several different wafer designs are created like "wafer before trimming", "wafer before trimming but with passivation", "wafer after trimming but without passivation", "wafer with trimming and passivation" to the study the non-linearity. Wafer measurements and simulations are performed for different metalization ratios. Similarly, the PCB measurements up to third order inter-modulation products (IMD) and harmonics are carried out using X-parameter and conventional measurement set-up at high input power. The measurements results are compared with the nonlinear P-matrix simulation model to study the dominant sources of second and third order non-linearity in SAW components. The final goal is to find which versions of 1-port and 2-port single SAW resonators has reduced non-linearity},
    author = {Chauhan, Vikrant and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {European Microwave Week (EuMW), Worshop on High-Q RF MEMS devices and multiphysical cross-layer circuit design},
    cris = {https://cris.fau.de/converis/publicweb/publication/201793589},
    year = {2017},
    month = {12},
    day = {08},
    eventdate = {2017-12-08/2017-12-08},
    eventtitle = {European Microwave Week (EuMW), Worshop on High-Q RF MEMS devices and multiphysical cross-layer circuit design},
    faupublication = {yes},
    peerreviewed = {No},
    title = {Non-linearity in Surface Acoustic Wave devices for wireless communication at 2 GHz frequency From wafer measurements to PCB simulation},
    type = {Abstract zum Vortrag},
    venue = {Nuremberg, Germany},
    }
  • M. Dietz, T. Girg, A. Bauch, K. Aufinger, A. Hagelauer, D. Kissinger, and R. Weigel, "Broadband Multi-Octave Receiver from 1-32 GHz for Monolithic Integrated Vector Network Analyzers (VNA) in SiGe-Technology" in European Microwave Integrated Circuits Conference, Nuremberg, Germany, Germany, 2017, pp. 49-52. [DOI] [Bibtex]
    @inproceedings{dietz2017,
    author = {Dietz, Marco and Girg, Thomas and Bauch, Andreas and Aufinger, Klaus and Hagelauer, Amelie and Kissinger, Dietmar and Weigel, Robert},
    language = {English},
    booktitle = {European Microwave Integrated Circuits Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/109124884},
    year = {2017},
    month = {12},
    day = {08},
    doi = {10.23919/EUMIC.2017.8230657},
    eventdate = {2017-10-08/2017-10-13},
    eventtitle = {European Microwave Integrated Circuits Conference},
    faupublication = {yes},
    pages = {49--52},
    peerreviewed = {unknown},
    title = {Broadband Multi-Octave Receiver from 1-32 GHz for Monolithic Integrated Vector Network Analyzers (VNA) in SiGe-Technology},
    type = {Konferenzschrift},
    venue = {Nuremberg, Germany, Germany},
    }
  • V. Silva Cortes, J. Binder, G. Fischer, and A. Hagelauer, "Influence of Loss Mechanisms on High Q Whispering Gallery Mode (WGM) Resonators suitable for RF Applications" in IEEE Electrical Design of Advanced Packaging and Systems Symposium, Haining, China, 2017, pp. 1-3. [DOI] [Bibtex]
    @inproceedings{silva2017a,
    author = {Silva Cortes, Victor and Binder, Jonathan and Fischer, Georg and Hagelauer, Amelie},
    booktitle = {IEEE Electrical Design of Advanced Packaging and Systems Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/118213084},
    year = {2017},
    month = {12},
    day = {14},
    doi = {10.1109/EDAPS.2017.8276917},
    eventdate = {2017-12-14/2017-12-16},
    eventtitle = {IEEE Electrical Design of Advanced Packaging and Systems Symposium},
    faupublication = {yes},
    pages = {1--3},
    peerreviewed = {Yes},
    title = {Influence of Loss Mechanisms on High Q Whispering Gallery Mode (WGM) Resonators suitable for RF Applications},
    type = {Konferenzschrift},
    venue = {Haining, China},
    }
  • T. Mai, K. Schmid, A. Hagelauer, R. Weigel, and J. Röber, "A fully-differential Operational Amplifier using a new Chopping Technique and Low-Voltage Input Devices" in 24th IEEE International Conference on Electronics, Circuits and Systems, Batumi, Georgia, 2017, pp. 74-77. [DOI] [Bibtex]
    @inproceedings{mai2017,
    abstract = {A fully differential CMOS operational amplifier is presented. It uses a new chopping technique that works without the use of switching transistors in the high gain path, resulting in high noise performance and low offset. It is designed in a low-cost 180 nm process with a 5V supply voltage. In critical places, such as the differential pair, 1.8V-devices are used, as they provide much better matching and noise performance, and at the same time have lower parasitics. They are protected from breakdown conditions by several circuit techniques. Some of them are described below. The operational amplifier is used in a differential programmable gain amplifier for processing signals of up to 50 kHz bandwith with a SINAD > 100 dB, making it suitable as a preamplifier for 18-Bit ADCs.},
    author = {Mai, Timo and Schmid, Konstantin and Hagelauer, Amelie and Weigel, Robert and Röber, Jürgen},
    language = {English},
    booktitle = {24th IEEE International Conference on Electronics, Circuits and Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/108861104},
    year = {2017},
    month = {12},
    day = {05},
    doi = {10.1109/ICECS.2017.8292081},
    eventdate = {2017-12-05/2017-12-08},
    faupublication = {yes},
    keywords = {chopping; operational amplifier; gain boosting; 1/f-noise; offset; programmable gain amplifier;},
    pages = {74--77},
    peerreviewed = {unknown},
    title = {A fully-differential Operational Amplifier using a new Chopping Technique and Low-Voltage Input Devices},
    type = {Journal Article},
    venue = {Batumi, Georgia},
    }
  • W. Akstaller, C. Musolff, R. Weigel, and A. Hagelauer, "X-Parameter Characterization of TC SAW Filters with Enhanced Dynamic Range", IEEE Transactions on Microwave Theory and Techniques, vol. 65, iss. 11, pp. 4541-4549, 2017. [DOI] [Bibtex]
    @article{akstaller2017,
    abstract = {Increasing the integration of radio frequency frontend modules for mobile communication devices results in rising power densities within the components. Additionally, advanced communication techniques demand for more frequency bands to be supported. As a result, the probability of significant nonlinear emissions disturbing adjacent channels increases, and accurate modeling of the device’s response is required. The X-parameter-based modeling approach can be applied to this problem. In this paper, a measurement setup, which is based on a nonlinear vector network analyzer, is utilized in order to characterize a surface acoustic wave (SAW) filter. Due to the low power levels of the generated higher order harmonics and the demand for a power sweep, a high dynamic range (DR) is required. The application of frequency selective attenuators enables an increase of the effective DR by more than 40 dB. Based on this improved measurement setup, single-tone and two-tone X-parameter models of the SAW filter are created and evaluated for their ability to predict intermodulation distortion (IMD). Classic, scalar IMD measurements are used as a reference for the assessment of capabilities and limitations of both X-parameter approaches.},
    author = {Akstaller, Wolfgang and Musolff, Christian and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    cris = {https://cris.fau.de/converis/publicweb/publication/109703704},
    year = {2017},
    month = {11},
    doi = {10.1109/TMTT.2017.2751464},
    faupublication = {yes},
    issn = {0018-9480},
    journaltitle = {IEEE Transactions on Microwave Theory and Techniques},
    keywords = {Attenuators;Frequency measurement;Harmonic analysis;Mathematical model;Power harmonic filters;Receivers;Surface acoustic waves;Intermodulation distortion (IMD);X-parameter;nonlinearity;surface acoustic wave (SAW) filter},
    number = {11},
    pages = {4541--4549},
    peerreviewed = {Yes},
    shortjournal = {IEEE T MICROW THEORY},
    title = {X-Parameter Characterization of TC SAW Filters with Enhanced Dynamic Range},
    type = {Article in Journal},
    volume = {65},
    }
  • J. Rimmelspacher, A. Hagelauer, R. Weigel, and V. Issakov, "Experimental Study of Injected Interference Effects on Modulated Sidebands in CMOS LC VCO" in International Conference on Microwaves, Communications, Antennas and Electronic Systems, Tel-Aviv, Israel, 2017, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{rimmelspacher2017a,
    abstract = {This paper presents an experimental study on modulated sidebands in the output spectrum of a millimeterwave (mm-wave) CMOS voltage controlled oscillator (VCO). The results are used to calculate the injected current into the resonant tank in dependency on its locking range. The evaluated parameters are a measure of the oscillator’s sensitivity regarding injected periodic interferences. This is of interest when implemented in highly integrated systems, as e.g. in system-on-chip solutions.},
    author = {Rimmelspacher, Johannes and Hagelauer, Amelie and Weigel, Robert and Issakov, Vadim},
    language = {English},
    booktitle = {International Conference on Microwaves, Communications, Antennas and Electronic Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/111498024},
    year = {2017},
    month = {11},
    day = {13},
    doi = {10.1109/COMCAS.2017.8244812},
    eventdate = {2017-11-13/2017-11-15},
    faupublication = {yes},
    keywords = {injection locking,injection pulling,interference,modulated sidebands,millimeter-wave oscillator,CMOS technolog},
    pages = {1--4},
    peerreviewed = {unknown},
    title = {Experimental Study of Injected Interference Effects on Modulated Sidebands in CMOS LC VCO},
    type = {Journal Article},
    venue = {Tel-Aviv, Israel},
    }
  • V. Chauhan, M. Mayer, W. Ruile, K. Wagner, R. Weigel, A. Mayer, and A. Hagelauer, "Role of metal electrodes in the generation of third order non-linearities in Surface Acoustic Wave Components" in IEEE International Ultrasonics Symposium 2017, Washington, DC, USA, 2017, p. 4. [DOI] [Bibtex]
    @inproceedings{chauhan2017,
    abstract = {The growing complexity in RF front-ends, which support carrier aggregation and a growing number of frequency bands, leads to tightened nonlinearity requirements in all sub-components. The generation of third order intermodulation products (IMD3) are typical problems caused by the non-linearity of SAW devices. In the present work, we investigate temperature compensating (TC) SAW devices on Lithium Niobate-rot128YX. An accurate FEM simulation model [1] is employed, which allows to better understand the origin of nonlinearities in such acoustic devices.},
    author = {Chauhan, Vikrant and Mayer, Markus and Ruile, Werner and Wagner, Karl and Weigel, Robert and Mayer, Andreas and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE International Ultrasonics Symposium 2017},
    cris = {https://cris.fau.de/converis/publicweb/publication/118912464},
    year = {2017},
    month = {11},
    day = {11},
    doi = {10.1109/ULTSYM.2017.8091770},
    eventdate = {2017-09-06/2017-09-10},
    eventtitle = {International Ultrasonics Symposium 2017},
    faupublication = {yes},
    isbn = {9781538633830},
    issn = {1948-5727},
    keywords = {SAW; Intermodulation products; Nonlinear},
    pages = {4},
    peerreviewed = {unknown},
    title = {Role of metal electrodes in the generation of third order non-linearities in Surface Acoustic Wave Components},
    type = {Konferenzschrift},
    url = {http://ieeexplore.ieee.org/document/8091770/},
    venue = {Washington, DC, USA},
    }
  • M. Völkel, M. Dietz, R. Weigel, A. Hagelauer, and D. Kissinger, "A Low-Power 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology" in European Microwave Integrated Circuits Conference, Nürnberg, 2017, pp. 73-76. [DOI] [Bibtex]
    @inproceedings{voelkel2017a,
    abstract = {Abstract—In this paper a 60 GHz monolithic low-power sixport
    receiver front-end for high precision industrial radar systems is
    presented. The measurement principle is based on the passive
    superposition and power detection of two incident millimeterwave
    signals. The integrated receiver has been designed using
    a 0.13µm SiGe BiCMOS process from IHP (SG13G2) and
    includes a low noise amplifier (LNA), the passive sixport structure
    and four detectors. The signal processing in the baseband is
    done with an ADC-board designed with components from Texas
    Instruments and a Cyclone IV FPGA board. The integrated
    receiver circuit has a size of 1320µm x 950µm and a low power
    consumption of 73mW from a 3.3V supply.
    ~}, author = {Völkel, Matthias and Dietz, Marco and Weigel, Robert and Hagelauer, Amelie and Kissinger, Dietmar}, language = {English}, booktitle = {European Microwave Integrated Circuits Conference}, cris = {https://cris.fau.de/converis/publicweb/publication/108863304}, year = {2017}, month = {10}, day = {10}, doi = {10.23919/EUMIC.2017.8230663}, eventdate = {2017-10-08/2017-10-13}, faupublication = {yes}, keywords = {industrial radar; interferometer; phase measurement; sixport; low power; SiGe BiCMOS}, pages = {73--76}, peerreviewed = {unknown}, title = {A Low-Power 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Nürnberg}, }
  • M. Völkel, H. Hirsch, M. Dietz, R. Weigel, A. Hagelauer, and D. Kissinger, "A Low-Power 120-GHz Integrated Sixport Receiver Front-End with Digital Adjustable Gain in a 130-nm BiCMOS Technology" in IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Miami, FL, USA, 2017, pp. 82-85. [DOI] [Bibtex]
    @inproceedings{voelkel2017b,
    abstract = {In this paper a 120GHz monolithic low-power
    sixport receiver front-end including two variable gain amplifiers,
    a passive sixport network, four detectors and a digital serial
    interface (SPI) is presented. The measurement principle is based
    on the additive superposition of two incident millimeter-wave
    signals, whereas the superposition must be fulfilled under special
    conditions. After power detection, the quadrature components
    can be extracted. The proposed measurement system is well
    suited for industrial radar applications, as well as for biomedical
    applications and it is further more well suited for communication
    systems. The receiver has been designed using a 0.13μm SiGe
    BiCMOS process from IHP (SG13G2). The whole integrated
    circuit has a size of 1560μm x 900μm and only consumes
    102.3mW from a 3.3V supply. The receiver exhibits a 1 dB
    compression point of -13dBm at the center frequency. The
    bandwidth is 15.5 GHz and covers the lower part of the D-Band.
    The gain of the input amplifier can be adjusted from 3 to 16 dB
    by a digital interface. The maximum power consumption of the
    VGA is 46.2mW.}, author = {Völkel, Matthias and Hirsch, Hartmut and Dietz, Marco and Weigel, Robert and Hagelauer, Amelie and Kissinger, Dietmar}, language = {English}, booktitle = {IEEE Bipolar/BiCMOS Circuits and Technology Meeting}, cris = {https://cris.fau.de/converis/publicweb/publication/123561284}, year = {2017}, month = {10}, day = {19}, doi = {10.1109/BCTM.2017.8112916}, eventdate = {2017-10-19/2017-10-21}, eventtitle = {IEEE Bipolar/BiCMOS Circuits and Technology Meeting}, faupublication = {yes}, keywords = {industrial radar; communication receiver; interferometer; phase measurement; sixport; low power; SiGe BiCMOS; millimeter-wave}, pages = {82--85}, peerreviewed = {Yes}, title = {A Low-Power 120-GHz Integrated Sixport Receiver Front-End with Digital Adjustable Gain in a 130-nm BiCMOS Technology}, type = {Konferenzschrift}, venue = {Miami, FL, USA}, }
  • A. Bauch, M. Dietz, R. Weigel, A. Hagelauer, and D. Kissinger, "A Broadband 10-95 GHz Variable Gain Amplifier in a 130 nm BiCMOS Technology" in European Microwave Integrated Circuits Conference, Nuremberg, Germany, 2017, pp. 155-158. [DOI] [Bibtex]
    @inproceedings{bauch2017,
    author = {Bauch, Andreas and Dietz, Marco and Weigel, Robert and Hagelauer, Amelie and Kissinger, Dietmar},
    booktitle = {European Microwave Integrated Circuits Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/109315404},
    year = {2017},
    month = {10},
    day = {08},
    doi = {10.23919/EUMIC.2017.8230683},
    eventdate = {2017-10-08/2017-10-13},
    faupublication = {yes},
    pages = {155--158},
    peerreviewed = {unknown},
    title = {A Broadband 10-95 GHz Variable Gain Amplifier in a 130 nm BiCMOS Technology},
    type = {Konferenzschrift},
    venue = {Nuremberg, Germany},
    }
  • V. Issakov, J. Rimmelspacher, S. Trotta, M. Tiebout, A. Hagelauer, and R. Weigel, "A 52-to-67 GHz Dual-Core Push-Push VCO in 40-nm CMOS" in European Microwave Conference, Nuremberg, Germany, 2017, pp. 755-758. [DOI] [Bibtex]
    @inproceedings{issakov2017a,
    abstract = {

    We present a continuously tunable 52-to-67 GHz push-push dual-core voltage-controlled oscillator (VCO) in a 40 nm bulk CMOS technology. The circuit is suitable for 60 GHz FMCW radar applications requiring a continuously tunable ultra-wide modulation bandwidth. The LC-tank inductor is used to couple the two VCO cores. The fundamental frequency of the VCO can be tuned from 26 GHz to 33,5 GHz, which corresponds to a frequency tuning range (FTR) of 25%. The second harmonic is extracted in a non-invasive way using a transformer. The primary side acts simultaneously as a second harmonic filter. The VCO achieves in measurement a low phase noise of 91,8 dBc=Hz at 1 MHz offset at 62 GHz and an output power of 20 dBm. The VCO including buffers dissipates in the dual-core operation mode 60 mA from a single 1,1 V supply and consumes a chip area of 0,58 mm2.}, author = {Issakov, Vadim and Rimmelspacher, Johannes and Trotta, Saverio and Tiebout, Marc and Hagelauer, Amelie and Weigel, Robert}, language = {English}, booktitle = {European Microwave Conference}, cris = {https://cris.fau.de/converis/publicweb/publication/111491424}, year = {2017}, month = {10}, day = {08}, doi = {10.23919/EUMC.2017.8230957}, eventdate = {2017-10-08/2017-10-13}, eventtitle = {European Microwave Conference}, faupublication = {yes}, keywords = {millimeter-wave,ultra-wideband,CMOS technology}, pages = {755--758}, peerreviewed = {Yes}, title = {A 52-to-67 GHz Dual-Core Push-Push VCO in 40-nm CMOS}, type = {Journal Article}, venue = {Nuremberg, Germany}, }

  • V. Issakov, J. Rimmelspacher, A. Werthof, A. Hagelauer, and R. Weigel, "Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz" in IEEE MTT-S International Microwave Symposium 2017, Honolulu, Hawaii, USA, USA, 2017, p. 3. [DOI] [Bibtex]
    @inproceedings{issakov2017,
    abstract = {Interferences injected to an RF circuit may strongly deteriorate the electrical performance. Parasitic coupling via substrate is one of the dominant interference transmission mechanisms in highly integrated systems. The effect of substrate coupling becomes more critical at higher circuit frequencies. This poses a particular challenge for highly integrated millimeterwave systems, since isolation techniques become less efficient with an increasing operating frequency. This paper presents an experimental study on coupling via bulk silicon and RFSOI substrates. We investigate in measurement up to 110 GHz efficiency of several isolation techniques, such as triple-well, p+ and n+ guard-rings and use of undoped highly resistive region. Additionally, RF-SOI substrates are known to be beneficial for higher crosstalk isolation. However, also this isolation degrades at higher frequencies. Hence, we investigate in measurement up to 110 GHz the isolation via low-resistivity and high-resistivity trap-rich SOI substrate variants. Test structures were realized in 40 nm bulk CMOS and 45 nm RF-SOI technology nodes.},
    author = {Issakov, Vadim and Rimmelspacher, Johannes and Werthof, Andreas and Hagelauer, Amelie and Weigel, Robert},
    language = {English},
    booktitle = {IEEE MTT-S International Microwave Symposium 2017},
    cris = {https://cris.fau.de/converis/publicweb/publication/108607444},
    year = {2017},
    month = {06},
    day = {04},
    doi = {10.1109/MWSYM.2017.8058792},
    eventdate = {2017-06-04/2017-06-09},
    eventtitle = {International Microwave Symposium 2017},
    faupublication = {yes},
    keywords = {millimeter-wave,Substrate-coupling effects,CMOS,Silicon-on-Insulator.},
    pages = {3},
    peerreviewed = {unknown},
    title = {Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz},
    type = {Journal Article},
    venue = {Honolulu, Hawaii, USA, USA},
    }
  • J. Rimmelspacher, R. Weigel, A. Hagelauer, and V. Issakov, "36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology" in IEEE MTT-S International Microwave Symposium 2017, Honolulu, HI, USA, 2017, pp. 1356-1358. [DOI] [Bibtex]
    @inproceedings{rimmelspacher2017,
    abstract = {This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RFSOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.},
    author = {Rimmelspacher, Johannes and Weigel, Robert and Hagelauer, Amelie and Issakov, Vadim},
    language = {English},
    booktitle = {IEEE MTT-S International Microwave Symposium 2017},
    cris = {https://cris.fau.de/converis/publicweb/publication/111456664},
    year = {2017},
    month = {06},
    day = {04},
    doi = {10.1109/MWSYM.2017.8058865},
    eventdate = {2017-06-04/2017-06-09},
    eventtitle = {International Microwave Symposium 2017},
    faupublication = {yes},
    keywords = {millimeter-wave,ultra-wideband,CMOS technology,cutoff frequency,System-on-Chip,Silicon-on-Insulator},
    pages = {1356--1358},
    peerreviewed = {unknown},
    title = {36 % Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology},
    type = {Journal Article},
    venue = {Honolulu, HI, USA},
    }
  • C. Schmidt, M. Luebcke, M. Dietz, R. Weigel, D. Kissinger, and A. Hagelauer, "Determination of Changes in NaCl Concentration in Aqueous Solutions Using an M-Sequence Based Sensor System" in IEEE International Microwave Bio-Conference, Göteborg, Sweden, 2017, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{schmidt2017a,
    author = {Schmidt, Christian and Luebcke, Maximilian and Dietz, Marco and Weigel, Robert and Kissinger, Dietmar and Hagelauer, Amelie},
    booktitle = {IEEE International Microwave Bio-Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/108383484},
    year = {2017},
    month = {05},
    day = {15},
    doi = {10.1109/IMBIOC.2017.7965786},
    eventdate = {2017-05-15/2017-05-17},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Determination of Changes in NaCl Concentration in Aqueous Solutions Using an M-Sequence Based Sensor System},
    type = {Konferenzschrift},
    venue = {Göteborg, Sweden},
    }
  • M. Völkel, M. Dietz, A. Hagelauer, R. Weigel, and D. Kissinger, "A 60-GHz Low-Noise Variable-Gain Amplifier in a 130-nm BiCMOS Technology for Sixport Applications" in IEEE International Symposium on Circuits and Systems, Baltimore, USA, 2017, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{voelkel2017,
    abstract = {Abstract—A monolithic low noise variable gain amplifier (LNA)
    operating at 60 GHz is presented. It is designed for a sixport
    receiver, which is completely integrated on a single chip. These
    chips are build in highly miniaturized sensors to measure
    distances with radar. Therefore a high performance LNA is
    indispensable. The circuit has been designed using a new 0.13 m
    SiGe BiCMOS process from IHP (SG13G2). For implementation
    a three stage architecture is chosen. Measurements show a
    tuneable gain from 16 to 24 dB at 60 GHz, an input matching of
    -17 dB and an output matching of -14 dB. The circuit consumes
    13mA from a 3.3V supply.}, author = {Völkel, Matthias and Dietz, Marco and Hagelauer, Amelie and Weigel, Robert and Kissinger, Dietmar}, language = {English}, booktitle = {IEEE International Symposium on Circuits and Systems}, cris = {https://cris.fau.de/converis/publicweb/publication/108862424}, year = {2017}, month = {05}, day = {29}, doi = {10.1109/ISCAS.2017.8050493}, eventdate = {2017-05-28/2017-05-31}, faupublication = {yes}, pages = {1--4}, peerreviewed = {unknown}, title = {A 60-GHz Low-Noise Variable-Gain Amplifier in a 130-nm BiCMOS Technology for Sixport Applications}, type = {Konferenzschrift}, venue = {Baltimore, USA}, }
  • C. Schmidt, J. Nehring, M. Dietz, R. Weigel, D. Kissinger, and A. Hagelauer, "A 10 Gb/s Highly-Integrated Adaptive Pseudo-Noise Transmitter for Biomedical Applications" in IEEE Radio and Wireless Symposium, Phoenix, 2017, pp. 101-103. [DOI] [Bibtex]
    @inproceedings{schmidt2017,
    abstract = {A highly-integrated (2\^{}11)-1 pseudo-random bit sequence (PRBS) transmitter for biomedical applications is presented. The chip consists of an ultra-wideband synthesizer with an integrated divider to drive a PLL, a linear feedback shift register (LFSR) to generate an M-sequence and a programmable binary divider to enable adaptive subsampling technique in the signal processing path. The circuit is created to be used in a miniaturized portable PRBS based sensor system for biomedical applications. A conceivable application is the measurement of dehydration in a human body. The PRBS generator is capable of generating a bit-rate up to 10 Gb/s, correlating to a maximum bandwidth of the generated sequence of 5 GHz, which is sufficient for the designated applications. The circuit is manufactured in an 0.35 um SiGe-Bipolar technology with an ft of 200 GHz using 12 mm\^{}2 chip area.},
    author = {Schmidt, Christian and Nehring, Johannes and Dietz, Marco and Weigel, Robert and Kissinger, Dietmar and Hagelauer, Amelie},
    booktitle = {IEEE Radio and Wireless Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/108240044},
    year = {2017},
    month = {01},
    doi = {10.1109/RWS.2017.7885957},
    faupublication = {yes},
    pages = {101--103},
    peerreviewed = {Yes},
    title = {A 10 Gb/s Highly-Integrated Adaptive Pseudo-Noise Transmitter for Biomedical Applications},
    venue = {Phoenix},
    }
  • C. Söll, J. Röber, H. Milosiu, R. Weigel, and A. Hagelauer, "Area-Efficient Fully Integrated Dual-Band Class-E/F Power Amplifier with Switchable Output Power for a BPSK/OOK Transmitter" in IEEE International Symposium on Circuits and Systems, Baltimore, USA, 2017, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{soell2017a,
    abstract = {This paper presents a novel area-efficient dual-band class-E/F power amplifier (PA) with switchable output power. It is targeted to work in a BPSK/OOK transmitter in smart facility applications like an autarkic asset-tracking system based on small sensor nodes. The amplifier is able to operate at both 434MHz and 868MHz without the need for additional inductors. The output power settings at 868MHz are controllable between -1.79dBm and -24.61dBm at 4.96mA and 1.43mA current consumption, respectively. The whole circuit including all inductors and the matching network in front of the antenna consumes only 0.9mm2 chip area and is fully integrated in a 180nm CMOS process together with a VCO and a PLL.},
    author = {Söll, Christopher and Röber, Jürgen and Milosiu, Heinrich and Weigel, Robert and Hagelauer, Amelie},
    booktitle = {IEEE International Symposium on Circuits and Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/108242684},
    year = {2017},
    doi = {10.1109/ISCAS.2017.8050676},
    faupublication = {yes},
    keywords = {Class-E/F Power Amplifier; Dual-Band; Switchable Output Power; Asset-Tracking System},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Area-Efficient Fully Integrated Dual-Band Class-E/F Power Amplifier with Switchable Output Power for a BPSK/OOK Transmitter},
    type = {Konferenzschrift},
    venue = {Baltimore, USA},
    }

2016

  • T. Girg, D. Schrüfer, M. Dietz, A. Hagelauer, D. Kissinger, and R. Weigel, "Low Complexity 60-GHz Receiver Architecture for Simultaneous Phase and Amplitude Regenerative Sampling Systems" in International Symposium on Integrated Circuits, Singapur, 2016, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{girg2016a,
    abstract = {With increasing data rates in communication systems, the call for wideband transceiver solutions capable of processing complex modulation schemes is getting stronger. Unfortunately, this goes along with power hungry systems and more complex integrated circuits. A novel receiver architecture, which addresses these issues, is based on the simultaneous phase and amplitude regenerative sampling system. Its system exploits switched injection-locked oscillators and their capability to regenerate signals with a gain of over 40dB. This paper demonstrates an integrated solution for phase demodulation in such an architecture. The proposed concept uses the low complex but efficient self-mixing principle and consists mainly of double-balanced Gilbert mixers, amplifiers, a delay line and passive power dividers. The detection of the phase is achieved through self-mixing the regenerated signal with one path delayed by a symbol period. The architecture achieves 2 GBaud/s with 8 th order differential phase shift keying at a frequency of 60 GHz and is realized in a 130nm SiGe BiCMOS technology.},
    author = {Girg, Thomas and Schrüfer, Daniel and Dietz, Marco and Hagelauer, Amelie and Kissinger, Dietmar and Weigel, Robert},
    publisher = {IEEE},
    booktitle = {International Symposium on Integrated Circuits},
    cris = {https://cris.fau.de/converis/publicweb/publication/108101884},
    year = {2016},
    month = {12},
    day = {12},
    doi = {10.1109/ISICIR.2016.7829729},
    eventdate = {2016-12-12/2016-12-14},
    eventtitle = {The 15th International Symposium on Integrated Circuits},
    faupublication = {yes},
    keywords = {SiGe; BiCMOS; simultaneous phase and amplitude regenrative sampling; high data rate; communication; self-mixing},
    pages = {1--4},
    peerreviewed = {No},
    title = {Low Complexity 60-GHz Receiver Architecture for Simultaneous Phase and Amplitude Regenerative Sampling Systems},
    type = {Konferenzschrift},
    url = {http://ieeexplore.ieee.org/document/7829729/},
    venue = {Singapur},
    }
  • V. Chauhan, M. Mayer, C. Huck, M. Pitschi, R. Weigel, and A. Hagelauer, "Nonlinear behavior of RF Bulk Acoustic Wave cascaded components at high input power" in IEEE Asia-Pacific Microwave Conference (APMC), New Delhi, India, India, 2016, p. 4. [DOI] [Bibtex]
    @inproceedings{chauhan2016a,
    abstract = {At high frequency, Bulk Acoustic Wave (BAW) devices are mainly used for filtering in front-ends of modern mobile transceivers. Furthermore, the transmitter filters are usually used at high input power levels of up to 33 dBm, which lead to nonlinearity and self-heating within the filter. In this work a thermo-electro-mechanical Mason model combined with a 3-dimensional electromagnetic finite element method (3D EM FEM) is used for modeling the nonlinear behavior of different BAW components. The impedance curve, filter response, second harmonics as well as inter-modulation distortion (IMD) of cascaded BAW resonators and filters due to the nonlinearities are explained. With the aid of the developed method, different cascading approaches for optimizing the nonlinear behavior are shown. Measurements of BAW components up to second order harmonics have been carried out using a nonlinear vector network analyzer (NVNA).},
    author = {Chauhan, Vikrant and Mayer, Markus and Huck, Christian and Pitschi, Maximilian and Weigel, Robert and Hagelauer, Amelie},
    language = {English},
    booktitle = {IEEE Asia-Pacific Microwave Conference (APMC)},
    cris = {https://cris.fau.de/converis/publicweb/publication/109703484},
    year = {2016},
    month = {12},
    day = {05},
    doi = {10.1109/APMC.2016.7931351},
    eventdate = {2016-12-05/2016-12-09},
    eventtitle = {2016 Asia-Pacific Microwave Conference (APMC)},
    faupublication = {yes},
    issn = {2165-4743},
    keywords = {Resonators;Harmonic analysis;Power harmonic filters;Power measurement;Frequency measurement;Area measurement;Bulk acoustic wave devices},
    pages = {4},
    peerreviewed = {Yes},
    title = {Nonlinear behavior of RF Bulk Acoustic Wave cascaded components at high input power},
    type = {Konferenzschrift},
    venue = {New Delhi, India, India},
    }
  • V. Silva Cortes, R. Weigel, G. Fischer, and A. Hagelauer, "High Power Effects on a MEMS-based Tunable Matching Network for Power Amplifier Reconfigurability" in Latin America Microwave Conference 2016, Puerto Vallarta, Mexico, 2016. [Bibtex]
    @inproceedings{silva2016b,
    abstract = {In this work, the thermal effects on a tunable matching network (TMN) based on micro electro mechanical system (MEMS) are investigated. A capacitive MEMS switch acts as the active component in a TMN that provides reconfigurability on the PA architecture. However, the large signal operation of the PA causes the membrane of the MEMS switch to heat up, leading to variations of its intrinsic characteristics. These effects are modeled and their influence on the linearity of the PA addressed. The study is aided by a behavioral model of the capacitive MEMS switch with the additional modeling of the thermal effects that raise due to power dissipation at the MEMS’s membrane. The PA architecture is based on a commercial process design kit for the PA and the geometrical and material characteristics of an available MEMS switch.},
    author = {Silva Cortes, Victor and Weigel, Robert and Fischer, Georg and Hagelauer, Amelie},
    publisher = {IEEE MTT-S},
    booktitle = {Latin America Microwave Conference 2016},
    cris = {https://cris.fau.de/converis/publicweb/publication/108667064},
    year = {2016},
    month = {12},
    day = {12},
    eventdate = {2016-12-12/2016-12-14},
    eventtitle = {Latin America Microwave Conference 2016},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {High Power Effects on a MEMS-based Tunable Matching Network for Power Amplifier Reconfigurability},
    venue = {Puerto Vallarta, Mexico},
    }
  • M. Dietz, G. A. Guarin Aristizabal, M. Hofmann, I. Nasr, J. Nehring, B. Lämmle, A. Schwarzmeier, K. Aufinger, A. Hagelauer, G. Fischer, R. Weigel, and D. Kissinger, "Wearables with integrated Microwave-Sensors for Internet-of-Things-Applications (IoT) in the sector of health-care: An overview" in VDE Kongress 2016: Internet der Dinge, Mannheim, 2016, pp. 1-6. [Bibtex]
    @inproceedings{dietz2016a,
    author = {Dietz, Marco and Guarin Aristizabal, Gustavo Adolfo and Hofmann, Maximilian and Nasr, Ismail and Nehring, Johannes and Lämmle, Benjamin and Schwarzmeier, Andre and Aufinger, Klaus and Hagelauer, Amelie and Fischer, Georg and Weigel, Robert and Kissinger, Dietmar},
    publisher = {VDE},
    booktitle = {VDE Kongress 2016: Internet der Dinge},
    cris = {https://cris.fau.de/converis/publicweb/publication/108126524},
    year = {2016},
    month = {11},
    day = {07},
    eventdate = {2016-11-07/2016-11-08},
    faupublication = {yes},
    pages = {1--6},
    peerreviewed = {unknown},
    title = {Wearables with integrated Microwave-Sensors for Internet-of-Things-Applications (IoT) in the sector of health-care: An overview},
    venue = {Mannheim},
    }
  • D. Hohnloser, D. Schuklin, C. Schmidt, M. Kreitmaier, M. Blasini, A. Hagelauer, and R. Weigel, "Feasibility Analysis of a Novel Production Method for Monolithic Integrated MEMS with Nanogaps" in IEEE Sensors, Orlando, FL, USA, 2016, pp. 1-3. [DOI] [Bibtex]
    @inproceedings{hohnloser2016,
    abstract = {This paper analyses a novel production technique for the fabrication of microelectromechanical system (MEMS) with a gap in the scale of nanometer. The technology is based on a density-changing layer, which let a gap arise through the shrinkage of this layer. After the description of the technology, the requirements for monolithic integration and CMOS compatibility with respect to this technology are worked out. It has been discovered that there are several challenges to be overcome, especially to find a material composition which match the requirements will be important as well as to set up the process without affecting other CMOS device parameters. But if these challenges are solved the process will be suitable for various applications and enable to open up new markets.},
    author = {Hohnloser, Daniel and Schuklin, Dennis and Schmidt, Carsten and Kreitmaier, Michael and Blasini, Mario and Hagelauer, Amelie and Weigel, Robert},
    publisher = {IEEE},
    booktitle = {IEEE Sensors},
    cris = {https://cris.fau.de/converis/publicweb/publication/108092424},
    year = {2016},
    month = {10},
    day = {30},
    doi = {10.1109/ICSENS.2016.7808655},
    eventdate = {2016-10-30/2016-11-02},
    faupublication = {yes},
    keywords = {MEMS; NEMS},
    pages = {1--3},
    peerreviewed = {Yes},
    title = {Feasibility Analysis of a Novel Production Method for Monolithic Integrated MEMS with Nanogaps},
    venue = {Orlando, FL, USA},
    }
  • V. Issakov, M. Wojnowski, H. Knapp, S. Trotta, H. Forstner, K. Pressel, and A. Hagelauer, "Co-simulation and Co-design of Chip-Package-Board Interfaces in Highly-Integrated RF Systems" in IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), New Brunswick, NJ, USA, 2016, pp. 94-101. [DOI] [Bibtex]
    @inproceedings{issakov2016,
    abstract = {The level of integration for RF and mm-wave systems is continuously increasing. Highly-integrated system on chip solutions have to be encapsulated in a package and assembled on a board. In addition, to be more attractive as a product, the trend goes towards further integration of passives and antennas in a package. This drives the system in package solutions. However, electrical properties of the package and board may have a significant effect on system parameters, especially at high frequencies. Hence, layout features of package and board must be carefully modelled and considered during the design. Furthermore, it is often insufficient to model chip, package and board separately, as some high-frequency effects may not be captured. An example is electromagnetic coupling between integrated coils on chip and routing traces in package. In this paper we describe considerations on co-simulation and co-design of highlyintegrated RF systems by means of accurate electromagnetic modelling. We demonstrate the approach and various aspects of chip-package-board co-design based on examples of systems for various applications: 6 GHz VCO using embedded inductor; backhaul communication system in package for V-band and Eband and a four-channel 77 GHz automotive radar transceiver in a package with four dipole antennas.},
    author = {Issakov, Vadim and Wojnowski, Maciej and Knapp, Herbert and Trotta, Saverio and Forstner, Hans-Peter and Pressel, Klaus and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)},
    cris = {https://cris.fau.de/converis/publicweb/publication/124176184},
    year = {2016},
    month = {09},
    day = {25},
    doi = {10.1109/BCTM.2016.7738959},
    eventdate = {2016-09-25/2016-09-27},
    faupublication = {yes},
    pages = {94--101},
    peerreviewed = {Yes},
    title = {Co-simulation and Co-design of Chip-Package-Board Interfaces in Highly-Integrated RF Systems},
    venue = {New Brunswick, NJ, USA},
    }
  • V. Silva Cortes, V. Chauhan, R. Weigel, G. Fischer, and A. Hagelauer, "Nonlinear BAW Filter Effects on the Performance of an LTE Receiver" in IEEE International Ultrasonics Symposium, Tours, France, 2016, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{silva2016a,
    abstract = {In this work, the impact of the intrinsic nonlinear effects of BAW filters in the demodulation performance of an LTE receiver is evaluated. The nonlinear effects that shape the generation of higher harmonics in the BAW resonator are covered in a nonlinear model implemented in Keysight ADS and validated through nonlinear measurements done on a BAW resonator for its 2nd harmonic. The nonlinear filter characteristics and its power dependence are captured in a Poly Harmonic Distortion (PHD) model and used for the simulation of the LTE receiver.},
    author = {Silva Cortes, Victor and Chauhan, Vikrant and Weigel, Robert and Fischer, Georg and Hagelauer, Amelie},
    publisher = {International Ultrasonics Symposium},
    booktitle = {IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/122837484},
    year = {2016},
    month = {09},
    day = {18},
    doi = {10.1109/ULTSYM.2016.7728397},
    eventdate = {2016-09-18/2016-09-21},
    eventtitle = {IEEE International Ultrasonics Symposium},
    faupublication = {yes},
    keywords = {RF frontend; BAW; Nonlinear modeling},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Nonlinear BAW Filter Effects on the Performance of an LTE Receiver},
    venue = {Tours, France},
    }
  • C. Söll, T. Mai, L. Shi, J. Röber, T. Ußmüller, R. Weigel, and A. Hagelauer, "Low-Power High-Gain Operational Amplifier for Analog Image Pre-Processing in Smart Sensor Systems" in 15. ITG/GMM-Fachtagung Analog 2016, Bremen, 2016, pp. 28-32. [Bibtex]
    @inproceedings{soell2016c,
    abstract = {In this work, a low-power high-gain operational amplifier is presented, which is dedicated to work in an analog image pre-processing stage in a smart sensor system. This stage is able to detect edges and shapes for instance, before the image is passed to the ADC and the digital computation stage, reducing data and precision requirement of both stages. This approach helps to save power, making smart image sensor nodes with energy harvesting reasonable. Since the precision as well as the energy consumption of the edge detection algorithm is highly depended on the amplifier used for the basic summing and multiplier blocks, the design of it plays an important role for the approach. The proposed input/output rail-to-rail operational amplifier is based on a 150 nm CMOS process, has a gain of 77 dB and a unity gain bandwidth of 45.7MHz while consuming only 77 µA statically at a supply voltage of 1.8V.},
    author = {Söll, Christopher and Mai, Timo and Shi, Lan and Röber, Jürgen and Ußmüller, Thomas and Weigel, Robert and Hagelauer, Amelie},
    booktitle = {15. ITG/GMM-Fachtagung Analog 2016},
    cris = {https://cris.fau.de/converis/publicweb/publication/122848044},
    year = {2016},
    month = {09},
    faupublication = {yes},
    isbn = {9783800742653},
    keywords = {analog pre-processing; operational amplifier; low-power; high-gain; folded-cascode; GRK-1773},
    pages = {28--32},
    peerreviewed = {Yes},
    title = {Low-Power High-Gain Operational Amplifier for Analog Image Pre-Processing in Smart Sensor Systems},
    venue = {Bremen},
    }
  • C. Söll, L. Shi, J. Röber, M. Reichenbach, R. Weigel, and A. Hagelauer, "Low-Power Analog Smart Camera Sensor for Edge Detection" in IEEE International Conference on Image Processing (ICIP), Phoenix, USA, 2016. [DOI] [Bibtex]
    @inproceedings{soell2016,
    abstract = {This work presents an intelligent analog image sensor system for smart camera applications with the need of edge or marker detection. The system consists of a 3x3 read-out CMOS image sensor, an analog Sobel stage and additional circuitry like operational amplifiers and comparators to compute a 1bit image with the edges present in the taken photo. This information can then be further processed digitally to detect specific shapes in order to control robot routines, for example. The architecture of the proposed system is highly desirable as dedicated analog hardware has significant advantages in terms of power and speed compared to digital implementations. The overall system is simulated with the help of a 3x3 CMOS image sensor IC as well as Cadence Virtuoso for analog circuit simulation and MATLAB to convert the sequential information back to an image, and compared to other state of the art CMOS image sensors with edge detection capability. The analog Sobel circuit runs with a clock of 10MHz and consumes less than 0.79mW average power for the computation of the example image, and the whole 200x200 pixel image sensor consumes only 5.5mW at a frame rate of 75 fps.},
    author = {Söll, Christopher and Shi, Lan and Röber, Jürgen and Reichenbach, Marc and Weigel, Robert and Hagelauer, Amelie},
    booktitle = {IEEE International Conference on Image Processing (ICIP)},
    cris = {https://cris.fau.de/converis/publicweb/publication/123903164},
    year = {2016},
    month = {09},
    doi = {10.1109/ICIP.2016.7533193},
    faupublication = {yes},
    keywords = {Smart Camera; CMOS Image Sensor; Analog Processing Circuits; Analog Sobel; GRK-1773},
    peerreviewed = {Yes},
    title = {Low-Power Analog Smart Camera Sensor for Edge Detection},
    venue = {Phoenix, USA},
    }
  • V. Chauhan, A. Tag, M. Mayer, R. Weigel, and A. Hagelauer, "Modeling Nonlinear Behavior of RF Bulk Acoustic Wave Resonators" in IEEE International Ultrasonics Symposium (IUS), Tours, 2016, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{chauhan2016,
    abstract = {In this work, the Poly-Harmonic Distortion (PHD) model has been used to characterize the nonlinearities of Bulk Acoustic Wave (BAW) solidly mounted resonators (SMR). The new approach of using X-parameters for characterization and simulation of nonlinearities is described. The amplitude and phase of the fundamental mode and its harmonics up to third order have been measured and simulated by using the X-parameter framework. The simulation and measurement results for phase and amplitude of X-parameters describing the relations between incident and reflected harmonics of the same as well as different orders are shown. The X-parameter measurements of BAW components up to third order harmonics have been carried out with a nonlinear vector network analyzer (NVNA). These measurements under large-signal operating conditions were used to determine the nonlinear material constants responsible for the nonlinearity in BAW resonators.},
    author = {Chauhan, Vikrant and Tag, Andreas and Mayer, Markus and Weigel, Robert and Hagelauer, Amelie},
    booktitle = {IEEE International Ultrasonics Symposium (IUS)},
    cris = {https://cris.fau.de/converis/publicweb/publication/124175084},
    year = {2016},
    month = {09},
    day = {18},
    doi = {10.1109/ULTSYM.2016.7728406},
    eventdate = {2016-09-18/2016-09-21},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Modeling Nonlinear Behavior of RF Bulk Acoustic Wave Resonators},
    venue = {Tours},
    }
  • J. Kirchner, J. Nehring, G. A. Guarin Aristizabal, I. Nasr, B. Lämmle, M. Dietz, R. Weigel, D. Kissinger, and A. Hagelauer, "SiGe Integrated Broadband Wireless Sensors for Biomedical Applications" in 9th Sin-German Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC2016), Changchun, 2016, pp. 77-78. [Bibtex]
    @inproceedings{kirchner2016a,
    author = {Kirchner, Jens and Nehring, Johannes and Guarin Aristizabal, Gustavo Adolfo and Nasr, Ismail and Lämmle, Benjamin and Dietz, Marco and Weigel, Robert and Kissinger, Dietmar and Hagelauer, Amelie},
    booktitle = {9th Sin-German Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC2016)},
    cris = {https://cris.fau.de/converis/publicweb/publication/120010484},
    year = {2016},
    month = {09},
    faupublication = {yes},
    pages = {77--78},
    peerreviewed = {unknown},
    title = {SiGe Integrated Broadband Wireless Sensors for Biomedical Applications},
    venue = {Changchun},
    }
  • A. Tag, V. Chauhan, C. Huck, B. Bader, D. Karolewski, M. Pitschi, R. Weigel, and A. Hagelauer, "A Method for Accurate Modeling of BAW Filters at High Power Levels", IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, vol. 63, iss. 8, pp. 2207-2214, 2016. [DOI] [Bibtex]
    @article{tag2016,
    author = {Tag, Andreas and Chauhan, Vikrant and Huck, Christian and Bader, Bernhard and Karolewski, Dominik and Pitschi, Maximilian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    cris = {https://cris.fau.de/converis/publicweb/publication/124170684},
    year = {2016},
    month = {08},
    doi = {10.1109/TUFFC.2016.2615109},
    faupublication = {yes},
    issn = {0885-3010},
    journaltitle = {IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control},
    number = {8},
    pages = {2207--2214},
    peerreviewed = {Yes},
    shortjournal = {IEEE T ULTRASON FERR},
    title = {A Method for Accurate Modeling of BAW Filters at High Power Levels},
    volume = {63},
    }
  • C. Beck, H. J. Ng, R. Agethen, S. M. Pour Mousavi, H. Forstner, M. Wojnowski, K. Pressel, R. Weigel, A. Hagelauer, and D. Kissinger, "Industrial mmWave Radar Sensor in Embedded Wafer-Level BGA Packaging Technology", IEEE Sensors Journal, vol. 16, iss. 17, pp. 6566-6578, 2016. [DOI] [Bibtex]
    @article{beck2016,
    abstract = {We present highly integrated 60GHz radar transceivers for industrial sensor applications. The bistatic and monostatic transceivers are implemented in the SiGe bipolar technology and packaged using the embedded wafer-level ball grid array (eWLB) technology that allows for direct embedding of the antennas in the package redistribution layer. In this way, very compact and efficient radar frontends comprising all millimeter-wave components can be implemented in an 8 × 8mm2 package. These frontends were soldered on a standard low-cost PCB based on FR4 material. For verification of the proposed frontends, an FMCW radar system was developed and set up within this work. Theoretical considerations and simulations as well as corresponding measurements were carried out for the evaluation of the designed system. The demonstrator results of these embedded radar sensors show excellent system performance at a high integration level.},
    author = {Beck, Christopher and Ng, Herman Jalli and Agethen, Roman and Pour Mousavi, Seyed Mehran and Forstner, Hans-Peter and Wojnowski, Maciej and Pressel, Klaus and Weigel, Robert and Hagelauer, Amelie and Kissinger, Dietmar},
    publisher = {IEEE},
    cris = {https://cris.fau.de/converis/publicweb/publication/123908884},
    year = {2016},
    month = {07},
    day = {07},
    doi = {10.1109/JSEN.2016.2587731},
    faupublication = {yes},
    issn = {1530-437X},
    journaltitle = {IEEE Sensors Journal},
    keywords = {SiGe RFICs; SiP modules; millimeter-wave circuits; packaging; radar systems},
    number = {17},
    pages = {6566--6578},
    peerreviewed = {Yes},
    shortjournal = {IEEE SENS J},
    title = {Industrial mmWave Radar Sensor in Embedded Wafer-Level BGA Packaging Technology},
    volume = {16},
    }
  • T. Girg, C. Beck, M. Dietz, A. Hagelauer, D. Kissinger, and R. Weigel, "A 180 GHz Frequency Multiplier in a 130 nm SiGe BiCMOS Technology" in 2016 IEEE 14th International NEWCAS Conference, Vancouver, 2016, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{girg2016,
    abstract = {An integrated analog frequency multiplier for a novel high data rate communication system has been developed to multiply a 18 GHz input signal by ten to generate a 180 GHz output signal. With a first step the 18 GHz input signal is fed into a times five edge combiner, which generates an intermediate frequency of 90 GHz. Therefore five different phases with a delta of 72 degree are needed, that are provided by an active allpass filter chain. In a second step the 90 GHz intermediate frequency is given into a double-balanced Gilbert cell mixer. Here, frequency doubling is achieved by feeding the same signal into the LO and RF port of the mixer. Hence, the overall output frequency of 180 GHz results in 180 GHz with a simulated output power of -7 dBm. All simulations are done post-layout. The chip is implemented in a 130 nm BiCMOS technology with a chip area of 0.9 mm x 1 mm.},
    author = {Girg, Thomas and Beck, Christopher and Dietz, Marco and Hagelauer, Amelie and Kissinger, Dietmar and Weigel, Robert},
    publisher = {IEEE},
    booktitle = {2016 IEEE 14th International NEWCAS Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/108113324},
    year = {2016},
    month = {06},
    day = {26},
    doi = {10.1109/NEWCAS.2016.7604745},
    eventdate = {2016-06-26/2016-06-29},
    eventtitle = {2016 IEEE 14th International NEWCAS Conference},
    faupublication = {yes},
    keywords = {SiGe BiCMOS; high data rate communication; 180 GHz; simultaneous phase and amplitude regenerative sampling; transmitter; frequency multiplier},
    pages = {1--4},
    peerreviewed = {No},
    title = {A 180 GHz Frequency Multiplier in a 130 nm SiGe BiCMOS Technology},
    type = {Konferenzschrift},
    venue = {Vancouver},
    }
  • M. Dietz, C. Schmidt, F. Trenz, J. Nehring, A. Hagelauer, R. Weigel, and D. Kissinger, "Dehydratations-Erkennung im Alltag durch integrierte nicht-invasive Sensorik" in Medizin Innovativ - MedTech Summit 2016, Nürnberg, 2016. [Bibtex]
    @inproceedings{dietz2016,
    abstract = {Veränderungen im menschlichen Wasserhaushalt führen zur Verminderung der Leistungsfähigkeit im Alltag bis hin zu lebensbedrohlichen Situationen. Insbesondere hier ist eine Überwachung des menschlichen Wasserhaushaltes wichtig. Ein neuer Ansatz schafft die Möglichkeit, Nutzern auch im Alltag die aktive Überwachung ihres Hydratationszustandes zu ermöglichen. Das Verfahren beruht auf Sensorik, die als Stimulus eine elektromagnetische Welle verwendet. Aus der vom Gewebe reflektierten Welle können Rückschlüsse auf die Wasserkonzentration gezogen werden. So wird ein alltagstaugliches und hochintegriertes Detektionssystem möglich, welches vom Nutzer permanent getragen werden kann und die Analyse des Wasserhaushaltes erlaubt.},
    author = {Dietz, Marco and Schmidt, Christian and Trenz, Florian and Nehring, Johannes and Hagelauer, Amelie and Weigel, Robert and Kissinger, Dietmar},
    booktitle = {Medizin Innovativ - MedTech Summit 2016},
    cris = {https://cris.fau.de/converis/publicweb/publication/108120584},
    year = {2016},
    month = {06},
    faupublication = {yes},
    keywords = {Dehydratation; nicht-invasive Sensorik; Gesundheitsförderung; integrierte Diagnostik},
    peerreviewed = {No},
    title = {Dehydratations-Erkennung im Alltag durch integrierte nicht-invasive Sensorik},
    venue = {Nürnberg},
    }
  • V. Silva Cortes, D. Podoskin, J. Stegner, M. Fischer, S. Gropp, M. Hein, M. Hoffmann, J. Müller, R. Weigel, G. Fischer, and A. Hagelauer, "Evaluation of a Multiphysical RF MEMS Oscillator Based on LTE Receiver Performance Requirements" in International Conference on Microwave, Radar and Wireless Communications (MIKON), Krakow, Poland, 2016. [DOI] [Bibtex]
    @inproceedings{silva2016,
    abstract = {A simulation methodology dealing with the complexity of multiphysical MEMS models and their evaluation according to RF specification is presented. It is focused towards the evaluation of a hybrid MEMS-CMOS RF oscillator prior its realization, based on the demodulation performance of an LTE user equipment. The proposed multiphysical simulation approach enables to meet the constraints of the receiver specification, the design rules for manufacturing and the implementation with the novel silicon-ceramic composite substrate (SiCer) based on co-simulation and a parametrized behavioral model of the MEMS resonator. Thus, allowing to successfully address the constraints at the different abstraction levels of the design and manufacturing processes.},
    author = {Silva Cortes, Victor and Podoskin, Dmitry and Stegner, Johannes and Fischer, Michael and Gropp, Sebastian and Hein, Matthias and Hoffmann, Martin and Müller, Jens and Weigel, Robert and Fischer, Georg and Hagelauer, Amelie},
    booktitle = {International Conference on Microwave, Radar and Wireless Communications (MIKON)},
    cris = {https://cris.fau.de/converis/publicweb/publication/108115524},
    year = {2016},
    month = {05},
    day = {09},
    doi = {10.1109/MIKON.2016.7492025},
    eventdate = {2016-05-09/2016-05-11},
    eventtitle = {International Conference on Microwave, Radar and Wireless Communications (MIKON)},
    faupublication = {yes},
    peerreviewed = {Yes},
    title = {Evaluation of a Multiphysical RF MEMS Oscillator Based on LTE Receiver Performance Requirements},
    venue = {Krakow, Poland},
    }
  • J. Röber, S. Senega, A. Bänisch, A. Hagelauer, R. Weigel, and S. Lindenmeier, "Integrated Diversity Front-End for Digital Satellite Radio Reception" in IEEE MTT International Microwave Symposium (IMS), San Francisco, USA, 2016, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{roeber2016,
    abstract = {This paper presents a diversity integrated circuit (IC) for digital satellite radio (SDARS) at 2.3GHz. The IC contains an RF circuit which enables fast adaptive processing of up to three antenna signals for maximum ratio combining in a fast fading scenario. The RF front-end of the diversity system is integrated using 150 nm CMOS technology. The phase of each of the three input paths can be adjusted in quantized steps of 45° from 0° to 360°. If the input signal of one path suffers from fading, a single path can be completely turned off for reducing the power consumption. The diversity IC is evaluated by means of laboratory measurements as well as by tests where antenna signals of real fading scenarios are processed using the presented IC. The results showa typical improvement in radio reception of more than a factor of 4 compared to a conventional reception system.},
    author = {Röber, Jürgen and Senega, Simon and Bänisch, Andreas and Hagelauer, Amelie and Weigel, Robert and Lindenmeier, Stefan},
    publisher = {IEEE},
    booktitle = {IEEE MTT International Microwave Symposium (IMS)},
    cris = {https://cris.fau.de/converis/publicweb/publication/122840124},
    year = {2016},
    month = {05},
    doi = {10.1109/MWSYM.2016.7540318},
    eventtitle = {IEEE MTT International Microwave Symposium (IMS)},
    faupublication = {yes},
    keywords = {SDARS; Diversity; LNA; Phase Shifter; Power Combiner; Integrated Circuit; RF Front-end},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Integrated Diversity Front-End for Digital Satellite Radio Reception},
    venue = {San Francisco, USA},
    }
  • C. Hsieh, J. Röber, A. Bänisch, A. Hagelauer, T. Ußmüller, and R. Weigel, "A low power CMOS transmitter with Class-E power amplifiers for positioning application in multi-band" in GeMiC 2016, German Microwave Conference 2016, Bochum, Germany, 2016, pp. 433-436. [DOI] [Bibtex]
    @inproceedings{hsieh2016,
    abstract = {In this paper, a transmitter for outdoor positioning application such as animal tracking is introduced. Class-E power amplifiers are exploited in the transmitter system in order to increase the energy efficiency for the demand of long operation duration of the system. Along with the need of power saving, a circuit topology is proposed to realize the modulation based on Binary Offset Carrier (BOC) technique at two different bands to achieve higher positioning accuracy and better utilization of the spectrum by transmitting data simultaneously. The operating frequencies of the system are 868 MHz and 2.4 GHz, and the circuit is designed in 150nm CMOS technology. The power efficiency of the class-E power amplifier is greater than 50 % over 2.4-2.8 GHz while the measured output power is greater than 10 dBm from 1.3 to 2.8 GHz.},
    author = {Hsieh, Chia-Yu and Röber, Jürgen and Bänisch, Andreas and Hagelauer, Amelie and Ußmüller, Thomas and Weigel, Robert},
    publisher = {IEEE},
    booktitle = {GeMiC 2016, German Microwave Conference 2016},
    cris = {https://cris.fau.de/converis/publicweb/publication/108093084},
    year = {2016},
    month = {03},
    doi = {10.1109/GEMIC.2016.7461648},
    eventtitle = {GeMiC 2016, German Microwave Conference 2016},
    faupublication = {yes},
    keywords = {positioning; class-E},
    pages = {433--436},
    peerreviewed = {Yes},
    title = {A low power CMOS transmitter with Class-E power amplifiers for positioning application in multi-band},
    venue = {Bochum, Germany},
    }

2015

  • A. Hagelauer, W. Akstaller, A. Tag, and R. Weigel, "Characterization and Modeling of Nonlinearities in RF BAW Components for Mobile Communication" in Sixth International Symposium on Acoustic Wave Devices for Future Mobile Communication, Chiba, Japan, 2015, pp. 18-23. [Bibtex]
    @inproceedings{hagelauer2015,
    author = {Hagelauer, Amelie and Akstaller, Wolfgang and Tag, Andreas and Weigel, Robert},
    booktitle = {Sixth International Symposium on Acoustic Wave Devices for Future Mobile Communication},
    cris = {https://cris.fau.de/converis/publicweb/publication/119377324},
    year = {2015},
    month = {11},
    day = {24},
    eventdate = {2015-11-24/2015-11-25},
    faupublication = {yes},
    pages = {18--23},
    peerreviewed = {unknown},
    title = {Characterization and Modeling of Nonlinearities in RF BAW Components for Mobile Communication},
    venue = {Chiba, Japan},
    }
  • A. Tag, B. Bader, C. Huck, D. Karolewski, M. Pitschi, R. Weigel, and A. Hagelauer, "Impact of Spatial Distribution of Dissipated Power to Modeling of SMR BAW Resonators at High Power Levels", IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, vol. 62, iss. 10, pp. 1856-1864, 2015. [DOI] [Bibtex]
    @article{tag2015b,
    author = {Tag, Andreas and Bader, Bernhard and Huck, Christian and Karolewski, Dominik and Pitschi, Maximilian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    cris = {https://cris.fau.de/converis/publicweb/publication/106957884},
    year = {2015},
    month = {10},
    doi = {10.1109/TUFFC.2015.007036},
    faupublication = {yes},
    issn = {0885-3010},
    journaltitle = {IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control},
    number = {10},
    pages = {1856--1864},
    peerreviewed = {Yes},
    shortjournal = {IEEE T ULTRASON FERR},
    title = {Impact of Spatial Distribution of Dissipated Power to Modeling of SMR BAW Resonators at High Power Levels},
    volume = {62},
    }
  • A. Tag, V. Chauhan, R. Weigel, A. Hagelauer, B. Bader, C. Huck, M. Pitschi, and D. Karolewski, "Multiphysics Modeling of BAW Filter" in IEEE International Ultrasonics Symposium, Taipei, Taiwan, 2015, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{tag2016a,
    author = {Tag, Andreas and Chauhan, Vikrant and Weigel, Robert and Hagelauer, Amelie and Bader, Bernhard and Huck, Christian and Pitschi, Maximilian and Karolewski, Dominik},
    publisher = {IEEE},
    booktitle = {IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/123752684},
    year = {2015},
    month = {10},
    day = {21},
    doi = {10.1109/ULTSYM.2015.0115},
    eventdate = {2015-10-21/2015-10-24},
    eventtitle = {IEEE International Ultrasonics Symposium (IUS)},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {Yes},
    title = {Multiphysics Modeling of BAW Filter},
    venue = {Taipei, Taiwan},
    }
  • W. Akstaller, A. Tag, C. Musolff, R. Weigel, and A. Hagelauer, "Measurement Setup for X-Parameter Characterization of Bulk Acoustic Wave Resonators" in 85th Microwave Measurement Conference (ARFTG), Phoenix, AZ, USA, 2015, pp. 1-3. [DOI] [Bibtex]
    @inproceedings{akstaller2015,
    abstract = {In this work a modern measurement method has been utilized in order to characterize nonlinear behavior of bulk acoustic wave (BAW) solidly mounted resonators (SMR). Unlike typical nonlinearity characterization methods, the method which was employed here not only records amplitudes, but also the phase of generated harmonics. Furthermore, the relations between the harmonics of different order are given. The modeling approach being used is the poly harmonic distortion (PHD) modeling approach, realized by the measurement of X-Parameters. For that purpose it was necessary to extend a nonlinear vector network analyzer (NVNA) by external components in order to enable high power measurements. Afterwards, several optimization steps were required to perform phase calibration. This difficulty arose due to the high power incident tones and steep resonator impedance curves on the one hand and the limited power provided by the phase calibration standard on the other hand.},
    author = {Akstaller, Wolfgang and Tag, Andreas and Musolff, Christian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {85th Microwave Measurement Conference (ARFTG)},
    cris = {https://cris.fau.de/converis/publicweb/publication/108068004},
    year = {2015},
    month = {05},
    day = {22},
    doi = {10.1109/ARFTG.2015.7162919},
    eventdate = {2015-05-22/2015-05-22},
    faupublication = {yes},
    keywords = {X-Parameter; BAW},
    pages = {1--3},
    peerreviewed = {Yes},
    title = {Measurement Setup for X-Parameter Characterization of Bulk Acoustic Wave Resonators},
    venue = {Phoenix, AZ, USA},
    }
  • A. Tag, W. Akstaller, C. Musolff, B. Bader, M. Pitschi, R. Weigel, and A. Hagelauer, "Polyharmonic Distortion Modeling of RF BAW Components" in IEEE International Microwave Symposium, Phoenix, USA, 2015, pp. 1-3. [DOI] [Bibtex]
    @inproceedings{tag2015a,
    author = {Tag, Andreas and Akstaller, Wolfgang and Musolff, Christian and Bader, Bernhard and Pitschi, Maximilian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE International Microwave Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/123888204},
    year = {2015},
    month = {05},
    day = {17},
    doi = {10.1109/MWSYM.2015.7166954},
    eventdate = {2015-05-17/2015-05-22},
    faupublication = {yes},
    pages = {1--3},
    peerreviewed = {Yes},
    title = {Polyharmonic Distortion Modeling of RF BAW Components},
    venue = {Phoenix, USA},
    }
  • D. Karolewski, A. Tag, V. Silva Cortes, A. Hagelauer, G. Fischer, and C. Schäffel, "Modeling of BAW Filters for System Level Simulation" in German Microwave Conference, Nuremberg, 2015, pp. 410-413. [DOI] [Bibtex]
    @inproceedings{karolewski2015,
    author = {Karolewski, Dominik and Tag, Andreas and Silva Cortes, Victor and Hagelauer, Amelie and Fischer, Georg and Schäffel, Christoph},
    publisher = {IEEE},
    booktitle = {German Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/108042264},
    year = {2015},
    month = {03},
    day = {16},
    doi = {10.1109/GEMIC.2015.7107840},
    eventdate = {2015-03-16/2015-03-18},
    eventtitle = {German Microwave Conference (GeMiC)},
    faupublication = {yes},
    pages = {410--413},
    peerreviewed = {Yes},
    title = {Modeling of BAW Filters for System Level Simulation},
    venue = {Nuremberg},
    }
  • A. Tag, B. Bader, M. Pitschi, K. C. Wagner, R. Weigel, and A. Hagelauer, "Determination of Temperature Coefficients of Materials in RF BAW Resonators" in German Microwave Conference, Nürnberg, 2015, pp. 402-405. [DOI] [Bibtex]
    @inproceedings{tag2015,
    abstract = {A new, accurate, and fast approach for determining the temperature coefficients of the thin film materials used in RF BAW components has been developed allowing the precise modeling of BAW components at different ambient temperatures. The presented method is based on the investigation of several resonance frequencies of the resonators with different layer-stacks. The problem of determining the temperature coefficients from broadband resonator simulations and measurements was formulated as an overdetermined linear system of equations and solved by using the weighted least square method. The presented approach has been verified by measurements.},
    author = {Tag, Andreas and Bader, Bernhard and Pitschi, Maximilian and Wagner, Karl Christian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {German Microwave Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/108066904},
    year = {2015},
    month = {03},
    day = {16},
    doi = {10.1109/GEMIC.2015.7107838},
    eventdate = {2015-03-16/2015-03-18},
    eventtitle = {German Microwave Conference (GeMiC)},
    faupublication = {yes},
    pages = {402--405},
    peerreviewed = {Yes},
    title = {Determination of Temperature Coefficients of Materials in RF BAW Resonators},
    venue = {Nürnberg},
    }

2014

  • T. Ußmüller, A. Hagelauer, and R. Weigel, Technologies for RFID sensors and sensor tags, Cambridge University Press, 2014.. [DOI] [Bibtex]
    @book{ussmueller2014,
    author = {Ußmüller, Thomas and Hagelauer, Amelie and Weigel, Robert},
    publisher = {Cambridge University Press},
    booktitle = {Green RFID Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/110385924},
    year = {2014},
    month = {09},
    doi = {10.1017/CBO9781139343459.005},
    faupublication = {yes},
    isbn = {9781107030404},
    peerreviewed = {No},
    title = {Technologies for RFID sensors and sensor tags},
    type = {Band aus einer Reihe},
    }
  • A. Tag, D. Karolewski, B. Bader, M. Pitschi, R. Weigel, and A. Hagelauer, "Influence of Dissipated Power Distribution on BAW Resonators" in 2014 IEEE International Ultrasonics Symposium, Chicago, Illinois, USA, 2014, pp. 2627-2630. [DOI] [Bibtex]
    @inproceedings{tag2014b,
    abstract = {Background, Motivation and Objective: Bulk Acoustic Wave (BAW) filters and Duplexers are often used at high power levels at which the temperature of the device increases due to power dissipation (self-heating) resulting in turn in significant frequency shifts of the transfer function of the device. This behavior needs to be modeled accurately to be able to design devices working appropriately at these power levels. Statement of Contribution/Methods: Simulations with coupled electromagnetic (EM) acoustic thermal 3D finite element methods (FEM) require tremendously high calculation times. The solutions presented in the literature are based on a measured TCF and dissipated power calculated from S-parameters. That means neither the distribution of temperature nor the distribution of the dissipated power are considered. In our previously work, we have shown that the modeling of the frequency shifts caused by the self-heating behavior can be improved by taking the spatial temperature distribution into account. In this work, it will be shown for the first time that the spatial distribution of dissipated power considerably influence the temperature level and temperature distribution. Therefore, it has to be taken into account in order precisely model the BAW self-heating behavior. Results, Discussion and Conclusions: The acoustic was modeled in one dimension allowing efficient calculation times. EM has been modeled with a 3D FEM simulation program. From the obtained strain distribution along the different layers of the resonator (an example is shown in Fig. 1) the spatial distribution of viscous losses along the different layers was calculated and transferred to the thermal 3D simulation. The remaining main losses (eddy currents, redistribution currents, resistivity losses, and dielectric losses) were applied to the electrodes and piezoelectric layer. The result of the thermal simulation was the spatial temperature distribution over the device geometry. This temperature distribution was used to modify the geometry of the resonator and the materials for the EM and acoustic simulations. Finally, the acoustic and EM simulations were repeated with all the modifications providing the behavior of the resonator at high power level. By the extension of the modeling approach remarkable improvements (some tens of percents) in the modeling of the temperature level and the resonator transfer function frequency shifts have been achieved.},
    author = {Tag, Andreas and Karolewski, Dominik and Bader, Bernhard and Pitschi, Maximilian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {2014 IEEE International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/122758504},
    year = {2014},
    month = {09},
    day = {03},
    doi = {10.1109/ULTSYM.2014.0656},
    eventdate = {2014-09-03/2014-09-06},
    faupublication = {yes},
    pages = {2627--2630},
    peerreviewed = {Yes},
    title = {Influence of Dissipated Power Distribution on BAW Resonators},
    venue = {Chicago, Illinois, USA},
    }
  • A. Tag, D. Karolewski, C. Huck, B. Bader, M. Pitschi, W. Wagner, C. Schäffel, R. Weigel, and A. Hagelauer, "Influence of Temperature Distribution on Behavior, Modeling, and Reliability of BAW Resonators" in IEEE International Reliability Physics Symposium, Waikoloa, HI, USA, 2014, p. 5C.5.1--5C.5.7. [DOI] [Bibtex]
    @inproceedings{tag2014,
    author = {Tag, Andreas and Karolewski, Dominik and Huck, Christian and Bader, Bernhard and Pitschi, Maximilian and Wagner, W. and Schäffel, Christoph and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE International Reliability Physics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/122789524},
    year = {2014},
    month = {06},
    day = {01},
    doi = {10.1109/IRPS.2014.6860669},
    eventdate = {2014-06-01/2014-06-05},
    faupublication = {yes},
    pages = {5C.5.1--5C.5.7},
    peerreviewed = {Yes},
    title = {Influence of Temperature Distribution on Behavior, Modeling, and Reliability of BAW Resonators},
    venue = {Waikoloa, HI, USA},
    }

2013

  • S. M. Pour Mousavi, M. Wojnowski, R. Agethen, R. Weigel, and A. Hagelauer, "Antenna Array in eWLB for 61 GHz FMCW Radar" in Asia-Pacific Microwave Conference Proceedings (APMC), Seoul, 2013, pp. 310-312. [DOI] [Bibtex]
    @inproceedings{pourmousavi2013c,
    author = {Pour Mousavi, Seyed Mehran and Wojnowski, Maciej and Agethen, Roman and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {Asia-Pacific Microwave Conference Proceedings (APMC)},
    cris = {https://cris.fau.de/converis/publicweb/publication/110587884},
    year = {2013},
    month = {11},
    day = {05},
    doi = {10.1109/APMC.2013.6695129},
    eventdate = {2013-11-05/2013-11-08},
    faupublication = {yes},
    pages = {310--312},
    peerreviewed = {unknown},
    title = {Antenna Array in eWLB for 61 GHz FMCW Radar},
    venue = {Seoul},
    }
  • S. M. Pour Mousavi, M. Wojnowski, R. Agethen, R. Weigel, and A. Hagelauer, "Antenna Design and Characterization for a 61 GHz Transceiver in eWLB Package" in IEEE European Microwave Integrated Circuit Conference, Nuremberg, Germany, 2013, pp. 444-447. [Bibtex]
    @inproceedings{pourmousavi2013b,
    author = {Pour Mousavi, Seyed Mehran and Wojnowski, Maciej and Agethen, Roman and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE European Microwave Integrated Circuit Conference},
    cris = {https://cris.fau.de/converis/publicweb/publication/123392104},
    year = {2013},
    month = {10},
    day = {06},
    eventdate = {2013-10-06/2013-10-10},
    faupublication = {yes},
    pages = {444--447},
    peerreviewed = {Yes},
    title = {Antenna Design and Characterization for a 61 GHz Transceiver in eWLB Package},
    venue = {Nuremberg, Germany},
    }
  • E. Seler, M. Wojnowski, R. Weigel, and A. Hagelauer, "New Simulation Procedure for Accurate Package Modeling Considering Chip-Package Interaction" in IEEE Conference Electrical Performance of Electronic Packaging and Systems, San Jose, USA, 2013, pp. 43-46. [DOI] [Bibtex]
    @inproceedings{seler2013,
    author = {Seler, Ernst and Wojnowski, Maciej and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE Conference Electrical Performance of Electronic Packaging and Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/122720884},
    year = {2013},
    month = {10},
    doi = {10.1109/EPEPS.2013.6703463},
    faupublication = {yes},
    pages = {43--46},
    peerreviewed = {Yes},
    title = {New Simulation Procedure for Accurate Package Modeling Considering Chip-Package Interaction},
    venue = {San Jose, USA},
    }
  • S. M. Pour Mousavi, M. Wojnowski, R. Agethen, R. Weigel, and A. Hagelauer, "The Impact of embedded wafer level BGA Package on the Antenna Performance" in IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC), Torino, Italy, 2013, pp. 828-831. [DOI] [Bibtex]
    @inproceedings{pourmousavi2013a,
    author = {Pour Mousavi, Seyed Mehran and Wojnowski, Maciej and Agethen, Roman and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE},
    booktitle = {IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC)},
    cris = {https://cris.fau.de/converis/publicweb/publication/108001784},
    year = {2013},
    month = {09},
    day = {09},
    doi = {10.1109/APWC.2013.6624913},
    eventdate = {2013-09-09/2013-09-13},
    faupublication = {yes},
    pages = {828--831},
    peerreviewed = {Yes},
    title = {The Impact of embedded wafer level BGA Package on the Antenna Performance},
    venue = {Torino, Italy},
    }
  • A. Hagelauer, "Verlustmechanismen in BAW-Komponenten für Mobilfunkanwendungen", 2013. [Bibtex]
    @phdthesis{hagelauer2013,
    author = {Hagelauer, Amelie},
    institution = {FAU Erlangen-Nürnberg},
    cris = {https://cris.fau.de/converis/publicweb/publication/110540144},
    year = {2013},
    entrysubtype = {Dissertation},
    faupublication = {yes},
    peerreviewed = {automatic},
    title = {Verlustmechanismen in BAW-Komponenten für Mobilfunkanwendungen},
    type = {Dissertation},
    }

2012

  • A. Hagelauer, T. Ußmüller, and R. Weigel, "SAW and CMOS RFID Transponder-based Wireless Systems and their Applications" in IEEE International Frequency Control Symposium, Baltimore, 2012, pp. 1-4. [DOI] [Bibtex]
    @inproceedings{hagelauer2012,
    author = {Hagelauer, Amelie and Ußmüller, Thomas and Weigel, Robert},
    booktitle = {IEEE International Frequency Control Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/107923464},
    year = {2012},
    month = {05},
    doi = {10.1109/FCS.2012.6243630},
    faupublication = {yes},
    pages = {1--4},
    peerreviewed = {unknown},
    title = {SAW and CMOS RFID Transponder-based Wireless Systems and their Applications},
    venue = {Baltimore},
    }

2010

  • A. Hagelauer, A. Link, B. Bader, S. Marksteiner, K. C. Wagner, and R. Weigel, "Improved Modeling of Bulk Acoustic Wave Resonators and Filters" in IEEE International Ultrasonics Symposium 2010, San Diego, USA, 2010, pp. 857-860. [DOI] [Bibtex]
    @inproceedings{hagelauer2010,
    abstract = {Duplexers and filters for mobile radio are one of the classic field of application for the BAW technology. In recent years the size of the devices has been reduced by about a half and the trend is still toward more compact designs with higher performance at the same time. This translates directly to very demanding requirements on the effective coupling coefficient and on the quality factors of the underlying BAW resonators. Measurements show that the size and the shape of the resonators have a significant influence on the overall performance. Hence, size-relevant effects need to be considered in ID-simulation, which is the base for fast filter optimization. To evaluate the influence of the resonator size on the filter performance we analyzed several SMR-BAW resonator area and shape variations in combination with different overlap sizes in a series of experiments. Moreover, the influence of the overlap size on different resonator areas is studied with 2D-FEM simulations. In this paper we present the results of our resonator measurements. The results are basis for developing a modified ID model for designing BAW filters. Additionally, a new method for the extraction of an 'equivalent acoustic impedance' for the description of the acoustics is presented and compared to the modified ID-model.},
    author = {Hagelauer, Amelie and Link, Andreas and Bader, Bernhard and Marksteiner, Stefan and Wagner, Karl Christian and Weigel, Robert},
    publisher = {IEEE},
    booktitle = {IEEE International Ultrasonics Symposium 2010},
    cris = {https://cris.fau.de/converis/publicweb/publication/107670684},
    year = {2010},
    month = {10},
    doi = {10.1109/ULTSYM.2010.5935472},
    faupublication = {yes},
    keywords = {acoustic resonator filters; bulk acoustic wave devices; finite element analysis; 2D-FEM simulations; BAW filters; BAW technology; ID-simulation; SMR-BAW resonator; bulk acoustic wave resonators; effective coupling coefficient; equivalent acoustic impedance extraction; fast filter optimization; resonator measurements; resonator shape; resonator size; q-factor},
    pages = {857--860},
    peerreviewed = {unknown},
    title = {Improved Modeling of Bulk Acoustic Wave Resonators and Filters},
    venue = {San Diego, USA},
    }
  • S. Marksteiner, A. Link, A. Hagelauer, N. Selimovic, and B. Bader, "Modeling of BAW Filters and Duplexers" in Fourth International Symposium on Acoustic Wave Devices for Future Mobile Communication Systems, 2010. [Bibtex]
    @inproceedings{marksteiner2010,
    author = {Marksteiner, Stefan and Link, Andreas and Hagelauer, Amelie and Selimovic, N. and Bader, Bernhard},
    booktitle = {Fourth International Symposium on Acoustic Wave Devices for Future Mobile Communication Systems},
    cris = {https://cris.fau.de/converis/publicweb/publication/121809644},
    year = {2010},
    month = {04},
    faupublication = {yes},
    peerreviewed = {unknown},
    title = {Modeling of BAW Filters and Duplexers},
    }

2009

  • A. Hagelauer, B. Bader, G. Henn, A. Schaeufele, S. Marksteiner, K. C. Wagner, and R. Weigel, "Influence of Mobile Charges in the Substrate of BAW Filters on High Resistivity Silicon." in International Ultrasonics Symposium, 2009, pp. 2115-2118. [DOI] [Bibtex]
    @inproceedings{hagelauer2009a,
    abstract = {BAW (bulk acoustic wave) filters have emerged as an important technology for GHz filtering components. Especially the high quality factor and the good temperature coefficient make BAW filters well suited for W-CDMA band 2 and band 3 devices. During the design phase it is essential to analyze and minimize possible loss mechanisms to meet the high requirements of these devices. Well known loss mechanisms are metal conductivity, viscosity and acoustic losses. A less well known loss mechanism is the existence of mobile charges at the surface of high resistivity silicon. This loss effect appears between the silicon substrate and the first silicon dioxide layer of the BAW structure. Induced charges increase the insertion loss and influence the performance of BAW filters. The two methods that are most promising for BAW applications to minimize the effect are ion implantation and the use of low charge silicon-dioxide. The aim of this work is the investigation and comparison of the mentioned methods in case of mirror-type BAW filters. We describe the loss mechanism, its counter measures and the impact on the filter performance. Therefore we designed test filters and test structures, manufactured on several test wafers. Additionally we used EM-simulations to evaluate the measurements of our test structures. An extended filter simulation model reflects the measured insertion attenuation of the filter performance pretty well.},
    author = {Hagelauer, Amelie and Bader, Bernhard and Henn, G. and Schaeufele, A. and Marksteiner, Stefan and Wagner, Karl Christian and Weigel, Robert},
    booktitle = {International Ultrasonics Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/122315644},
    year = {2009},
    month = {09},
    doi = {10.1109/ULTSYM.2009.5441993},
    faupublication = {yes},
    isbn = {9781424443901},
    keywords = {BAW filter substrate; EM-simulations; GHz filtering components; W-CDMA band 2 devices; W-CDMA band 3 devices; bulk acoustic wave filters; extended filter simulation model; first silicon dioxide layer; high resistivity silicon; induced charges; insertion attenuation; insertion loss; ion implantation; loss mechanisms; low charge silicon dioxid; mirror-type BAW filters; silicon substrate; surface mobile charges; bulk acoustic wave devices; code division multiple access; dielectric losses; elemental semiconductors; radiofrequency filters; silicon; substrates; surface acoustic wave filters; surface charging},
    pages = {2115--2118},
    peerreviewed = {unknown},
    title = {Influence of Mobile Charges in the Substrate of BAW Filters on High Resistivity Silicon.},
    }
  • A. Hagelauer, B. Bader, G. Henn, A. Schaeufele, S. Marksteiner, K. C. Wagner, and R. Weigel, "Low-Loss BAW Filters on High Resistivity Silicon for Mobile Radio" in International Microwave Symposium, Boston, USA, 2009, pp. 337-340. [DOI] [Bibtex]
    @inproceedings{hagelauer2009,
    abstract = {Integration of bulk acoustic wave (BAW) filters into W-CDMA mobile communication applications is of high interest, as the BAW technology allows for low-loss and high Q signal forming in these 2 GHz devices. During the design phase of low- loss BAW filters it is very important that we not only control the most major loss mechanisms, like metal conductivity and viscosity of piezo material. We also have to focus the less well known losses. In this paper, we describe an interface loss effect which appears between the Si substrate and the first SiO2 layer of the BAW structure. Its influence on the filter characteristics of our 2 GHz filter is shown. This loss effect is caused by channel currents, which are induced by static charges (similar in FET transistors). For investigating the loss and its impact on the filter performance, we designed test structures and filters, performed and analyzed measurements, and adapted the loss model in our filter simulations accordingly.},
    author = {Hagelauer, Amelie and Bader, Bernhard and Henn, G. and Schaeufele, A. and Marksteiner, Stefan and Wagner, Karl Christian and Weigel, Robert},
    booktitle = {International Microwave Symposium},
    cris = {https://cris.fau.de/converis/publicweb/publication/109580064},
    year = {2009},
    month = {06},
    doi = {10.1109/MWSYM.2009.5165702},
    faupublication = {yes},
    isbn = {9781424428038},
    keywords = {FET transistors; SiO2; W-CDMA mobile communication applications; acoustic resonator filters; bulk acoustic wave filters; channel currents; low-loss BAW filters; metal conductivity; mobile radio; piezo material; static charges; acoustic resonator filters; bulk acoustic wave devices; code division multiple access; mobile radio; silicon compounds},
    pages = {337--340},
    peerreviewed = {unknown},
    title = {Low-Loss BAW Filters on High Resistivity Silicon for Mobile Radio},
    venue = {Boston, USA},
    }

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