Mitarbeiter

Dipl.-Ing. Andreas Bogner

Kontakt

Über Andreas Bogner

Biography

Andreas Bogner received his diploma in environmental engineering with a focus on electronics and sensors in 2017 at the University of Bayreuth, Germany. He is currently pursuing a PhD in electrical engineering at the University of Erlangen-Nuremberg, Germany. His main research interests are micro-acoustic components, tunable RF devices and wireless communications

Areas of Interest

  • Microwave Engineering
  • design, modeling, fabrication and characterization of bulk acoustic wave components
  • new piezoelectric materials (AlScN) for BAW components and crystal growth mechanisms in PVD 
  • acoustic resonator physics and correlation with quality factor and piezoelectric coupling coefficient
  • RF-MEMS filter design
  • Tunable RF-filter devices

Open thesis projetcs

Currently, there are no student theses available.

Preise & Auszeichnungen

  • A. Bogner, N. Muharemovic, and M. Dietz, IEEE MTT-S International Microwave Symposium Student Design Competition Second Place Award for "Carrier Aggregation BAW Quadplexer Module", IEEE Microwave Theory and Techniques Society (MTT-S), 2019. [Bibtex]
    @prize{bogner_prize_2019,
    author = {Bogner, Andreas and Muharemovic, Nedim and Dietz, Marco},
    booktitle = {IEEE Microwave Theory and Techniques Society (MTT-S)},
    cris = {bogner_prize_2019},
    year = {2019},
    title = {IEEE MTT-S International Microwave Symposium Student Design Competition Second Place Award for "Carrier Aggregation BAW Quadplexer Module"},
    type = {20773-Kleiner Preis},
    }

COPYRIGHT NOTICE: Copyright and all rights of the material above are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by the appropriate copyright. The material may not be reposted without the explicit permission of the copyright holder.

COPYRIGHT NOTICE FOR IEEE PUBLICATIONS: © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

COPYRIGHT NOTICE FOR EUMA PUBLICATIONS: © EUMA. Personal use of this material is permitted. Permission from European Microwave Association(EUMA) must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publikationen

2019

  • A. Bogner, R. Bauder, H. J. Timme, C. Reccius, R. Weigel, and A. Hagelauer, "All-Pass Based Filter Design Using BAW Resonators" in IEEE International Ultrasonics Symposium, IUS, Glasgow, UK, 2019, pp. 1685-1688. [DOI] [Bibtex]
    @inproceedings{bogner2019,
    abstract = {The integration of multiple bands and higher power standards lead to enhanced interference problems and make higher attenuation levels in next-gen RF-Front-Ends necessary. This paper introduces an all-pass based BAW filter design concept for notch, band-stop and band-pass filter topologies to indicate the possibilities and the impact of key parameters like material electromechanical coupling factor k-{eff}^2, piezoelectric material quality factor Qm and inductor losses QL. This work outlines the concept and design aspects. Also various examples will be proposed to show the main benefits of this approach.},
    author = {Bogner, Andreas and Bauder, Rudiger and Timme, Hans Jorg and Reccius, Christian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE Computer Society},
    booktitle = {IEEE International Ultrasonics Symposium, IUS},
    cris = {https://cris.fau.de/converis/publicweb/publication/234627116},
    year = {2019},
    month = {10},
    day = {01},
    doi = {10.1109/ULTSYM.2019.8925738},
    eventdate = {2019-10-06/2019-10-09},
    eventtitle = {2019 IEEE International Ultrasonics Symposium, IUS 2019},
    faupublication = {yes},
    isbn = {9781728145969},
    issn = {1948-5719},
    journaltitle = {IEEE International Ultrasonics Symposium},
    keywords = {acoustic wave filter; all-pass network; BAW filter; BAW resonator},
    pages = {1685--1688},
    peerreviewed = {unknown},
    title = {All-Pass Based Filter Design Using BAW Resonators},
    venue = {Glasgow, UK},
    volume = {2019-October},
    }
  • A. Bogner, H. J. Timme, R. Bauder, A. Mutzbauer, D. Pichler, M. Krenzer, C. Reccius, R. Weigel, and A. Hagelauer, "Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW" in IEEE International Ultrasonics Symposium, IUS, Glasgow, UK, 2019, pp. 706-709. [DOI] [Bibtex]
    @inproceedings{bogner2019a,
    abstract = {Applications using BAW devices benefit from large intrinsic electromechanical coupling materials, e.g. Al1-xScxN. This work reports BAW-SMRs using high piezoelectric Al1-xScxN and investigates the relations between Sc content, crystal morphology and resonator RF performance. Finally, key requirements for high quality Al1-xScxN thin-film growth are analyzed and discussed examplary for x = 20at.-%.},
    author = {Bogner, Andreas and Timme, Hans Jorg and Bauder, Rudiger and Mutzbauer, Angelika and Pichler, Diana and Krenzer, Michael and Reccius, Christian and Weigel, Robert and Hagelauer, Amelie},
    publisher = {IEEE Computer Society},
    booktitle = {IEEE International Ultrasonics Symposium, IUS},
    cris = {https://cris.fau.de/converis/publicweb/publication/234627371},
    year = {2019},
    month = {10},
    day = {01},
    doi = {10.1109/ULTSYM.2019.8925777},
    eventdate = {2019-10-06/2019-10-09},
    eventtitle = {2019 IEEE International Ultrasonics Symposium, IUS 2019},
    faupublication = {yes},
    isbn = {9781728145969},
    issn = {1948-5719},
    journaltitle = {IEEE International Ultrasonics Symposium},
    keywords = {AlScN; BAW resonator; BAW-SMR; thin-film growth},
    pages = {706--709},
    peerreviewed = {unknown},
    title = {Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW},
    venue = {Glasgow, UK},
    volume = {2019-October},
    }

COPYRIGHT NOTICE: Copyright and all rights of the material above are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by the appropriate copyright. The material may not be reposted without the explicit permission of the copyright holder.

COPYRIGHT NOTICE FOR IEEE PUBLICATIONS: © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

COPYRIGHT NOTICE FOR EUMA PUBLICATIONS: © EUMA. Personal use of this material is permitted. Permission from European Microwave Association(EUMA) must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.